NTMFS5C468NLT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTMFS5C468NLT1G is part of the Single MOSFET family used in transistors. It is an advanced level power MOSFET designed to provide customers with new levels of performance and reliability. This particular device is a insulated-gate bipolar transistor (IGBT) with an N-channel enhancement type that is suitable for both low and high side switching. The NTMFS5C468NLT1G utilizes a silicon nitride oxide (SiNO) gate dielectric for higher voltage degradation, improved on-state performance and lower switching losses. The feature of a low gate-threshold voltage allows the device to operate from a 5V supply. When used in combination with a low-side switch, the NTMFS5C468NLT1G allows customers to realize a significant reduction in power dissipation.

The NTMFS5C468NLT1G is suitable for a broad range of applications due to its wide Vds and its ability to work in a high temperature range. The device has a drain-source breakdown voltage of 650V, an RDS(on) (max.) of 2.5V, an Id(max.) of 25A and a robust temperature range of -40°C to +140°C. These features enable the NTMFS5C468NLT1G to become a crucial part of power supplies and other industrial control systems. It has wide applications in consumer electronic products such as smartphones, electronic home appliances, DC/DC converters and motor controllers.

The working principle of the NTMFS5C468NLT1G begins with an increase in the gate voltage. As the voltage continues to increase, a channel forms between the source and the drain. Once the voltage reaches the threshold voltage, then current is able to flow through the channel. As the gate voltage increases, the current passing through the channel can be controlled by the amount of voltage applied to the gate. The gate controls the current, thus allowing the user to switch between different levels of power and currents. The NTMFS5C468NLT1G acts as a switch or a gate to allow current to flow or prevent current from flowing.

The NTMFS5C468NLT1G is a popular single MOSFET device due to its superior performance, wide applications, low gate-threshold voltage and low on-state resistance. The highly reliable switch allows users to easily control power and current as well as maintain the highest level of protection for electronic components.

The specific data is subject to PDF, and the above content is for reference