Allicdata Part #: | NTMFS4120NT3G-ND |
Manufacturer Part#: |
NTMFS4120NT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 11A SO8FL |
More Detail: | N-Channel 30V 11A (Ta) 900mW (Ta) Surface Mount 5-... |
DataSheet: | NTMFS4120NT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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.NTMFS4120NT3G Application Field and Working Principle
The NTMFS4120NT3G is a type of MOSFET, or Metal Oxide Semiconductor Field Effect Transistor. This type of device is used for amplifying and switching electrical signals. MOSFETs are superior to conventional transistors as they are able to switch much faster, as well as having much lower input current and voltage requirements. The NTMFS4120NT3G is a single-ended device, meaning that it has a single polarity and no requirement for a reverse-biased voltage between its gates. This makes it ideal for use in amplifiers and control circuits.
The NTMFS4120NT3G has a 20V drain-source voltage limit and a 5A drain current limit. It is also capable of handling a fast pulse rate of up to 3 GHz. This range of figures puts it in the moderate power category, making it ideal for controlling moderate to high power devices. It is also suitable for high speed switching applications such as logic and circuit boards.
The NTMFS4120NT3G works on the principle of an insulated-gate field-effect transistor, or IG-FET. The basic principle behind this type of transistor is that an electrical field is generated between the two terminals, the source and the drain. This field is used to create a barrier between the two terminals, allowing current to flow only in one direction. The amount of current that is allowed to flow through the barrier can then be controlled by varying the voltage on the gate.
The NTMFS4120NT3G is primarily used as a power amplifier in high power applications. It is also suitable for use in audio and video systems. Due to its low voltage requirements, it is often used in mobile and battery powered devices. In addition, it can be used in a variety of other applications, including motor and motor control, switch-mode power supply, power LED lighting and automotive systems.
The NTMFS4120NT3G is a simple and reliable device with excellent performance characteristics, making it an ideal choice for a wide range of applications. It also offers very low on-state resistance, allowing for faster switching times and higher efficiency. This makes it a versatile device for a broad range of applications.
The specific data is subject to PDF, and the above content is for reference
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