Allicdata Part #: | NTMFS4837NHT3G-ND |
Manufacturer Part#: |
NTMFS4837NHT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 10.2A SO-8FL |
More Detail: | N-Channel 30V 10.2A (Ta), 75A (Tc) 880mW (Ta), 48W... |
DataSheet: | NTMFS4837NHT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 880mW (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3016pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23.8nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 10.2A (Ta), 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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.Transistors, especially those belonging to the family of Field Effect Transistors (FETs), are ubiquitous in modern electronics, because they they can act as an amplifier or an electrical switch, and are relatively inexpensive in comparison to other types of transistors. The NTMFS4837NHT3G is a single FET that is used in many applications including power switching, audio applications, and RF applications. This article will discuss the application of this FET as well as its working principle.
Application
The NTMFS4837NHT3G transistor is a power switching FET, meaning that it can be used in power electronic circuits to switch large currents and voltages with small control signals. For example, it can be used to implement circuits for motor speed control, motor driver applications, and power converters such as buck converters and step-down converters. In addition, it can be used in simple on/off switching applications, such as those used in home lighting and appliances. The NTMFS4837NHT3G can also be used in audio applications, where its low heat dissipation makes it ideal for use in guitar amplifiers and PA systems. Finally, it can be used in RF applications, such as RF switching, RF power amplifiers, and RF signal processing.
Working principle
The NTMFS4837NHT3G uses a metal oxide semiconductor (MOS) FET structure in which an insulated gate electrode is placed between the source and drain electrodes. The gate electrode is insulated from the channel of the FET by a thin oxide layer, and is used to control the current flow between the source and drain electrodes. When a positive voltage is applied to the gate electrode, it forms an electric field which changes the density of electrons in the channel and reduces the resistance between the source and drain. This allows a current to flow between the two electrodes. By adjusting the voltage on the gate electrode, the current can be controlled, allowing the FET to act as an amplifier or an electrical switch.
Conclusion
In conclusion, the NTMFS4837NHT3G FET is a versatile and relatively inexpensive power and audio FET that is suitable for a variety of applications, including power-switching, audio amplification, and RF signal processing. Its working principle is based on the metal oxide semiconductor FET structure, in which a gate electrode is placed between the source and drain electrodes and is used to manipulate the current flow between them.
The specific data is subject to PDF, and the above content is for reference
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