NTMFS4935NT3G Discrete Semiconductor Products

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The NTMFS4935NT3G is a part of Transistors - FETs, MOSFETs - Single. This part is a P-Channel MOSFET designed to be used in the embedded circuit designs that require fast switching. With its moderate RDS (on) characteristics and low gate charge, the NTMFS4935NT3G is well suited for applications such as load switching, audio switching and power management for mobile device designs.

The NTMFS4935NT3G P-Channel MOSFET utilizes a vertical DMOS design technique which reduces gate input capacitance. This reduced gate capacitance reduces the gate voltage required by the device, thus the NTMFS4935NT3G requires a reduced overall operating voltage. This P-Channel MOSFET operates in the drain–source breakdown voltage range from -20V to -60V with a maximum drain-source voltage of ±20V. It also provides a maximum junction temperature of 150°C and a maximum drain current of 24A for safe operations.

The most common applications of the NTMFS4935NT3G P-Channel MOSFET includes load switching, audio switches and power management for mobile device designs. In load switching applications, the NTMFS4935NT3G P-Channel MOSFET can be used in parallel with a low-side MOSFET to drive a higher voltage load. The NTMFS4935NT3G can also be used as an audio switch in digital audio applications, where it is used to control the power to digital audio amplifiers. Additionally, it can be used in power management circuits for mobile devices to maximize battery life by controlling the power to various components.

The NTMFS4935NT3G P-Channel MOSFET works on the principle of FETs, or field-effect transistors, which are unipolar devices composed of electronic circuits using either two or three terminals. FETs can be used as either an amplifier or a switch, and work by operating on the principle of the electric field between the source and the substrate. In particular, the NTMFS4935NT3G utilises a vertical DMOS structure, which consists of a silicon substrate with two regions of N-type material and an insulated-gate structure. The insulated-gate structure has a gate that is insulated from the substrate, and N-type material that provides electrical conduction between the gate and the substrate. When the gate voltage is changed, the electric field between the source and the substrate is altered, which controls the flow of electrons, thus acting as either an amplifier or a switch.

The NTMFS4935NT3G P-Channel MOSFET can be combined with other components and integrated into various circuit topologies, allowing users to create a wide range of circuits. Its moderate RDS (on) characteristics and low gate charge make it an ideal choice for applications that require fast switching, such as load switching, audio switching and power management for mobile device designs.

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