NTMFS4C020NT3G

Gate Charge (Qg) (Max) @ Vgs:	139nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	10144pF @ 15V
FET Feature:	--
Power Dissipation (Max):	3.2W (Ta), 134W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	47A (Ta), 303A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	0.7 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA

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Introduction

NTMFS4C020NT3G is a Single N-channel, BiFET (Bi-FET) MOSFET developed by ON Semiconductor. It is a power MOSFET which offers very high current-carrying capabilities and high input impedances in a very small package size. The NTMFS4C020NT3G provides advanced performance for high power applications, providing excellent performance, a low gate-to-source capacitance, and low turn-on and turn-off delays.

Application Field

NTMFS4C020NT3G is ideal for use in high-efficiency, high-reliability power supply systems as well as point of load (POL) converters and many other power applications. It can be applied in switching circuits, DC/DC & AC/DC converters, inverters, motor control, audible noise suppression, and electrostatic discharge protection. The principal application of NTMFS4C020NT3G is in the high-current switching circuits, where its low Gate charge, low ON resistance and its fast switching times offer optimal performance. The NTMFS4C020NT3G features common source, source follower, and source-drain operation which allows applications in various topologies dependent on system requirements. It can also be used with PWM controllers to achieve fast switching and smooth transitions to avoid audio noise and/or EMI.

Working Principle

The NTMFS4C020NT3G is based on a high-speed, low RDS(on) BiFET MOSFET process. The N-channel MOSFET uses a double-gate structure combined with a special gate insulation process to achieve high-speed operation, low RDS(on) and improved reliability. The NTMFS4C020NT3G operates on a single power supply and offers full voltage control of the Gate. The output is directly controlled by the Gate voltage and does not need additional protection circuitry. This makes the design of power circuits simpler and more efficient. The NTMFS4C020NT3G features an extremely low threshold voltage and fast switching times, allowing high-frequency operation. The device’s low threshold voltage reduces the amount of power consumed during operation, resulting in improved efficiency and longer operating hours. In addition, its fast switching times reduce the amount of acoustic noise, enabling improved system performance.

Conclusion

The NTMFS4C020NT3G offers excellent performance, fast switching times and high current-carrying capabilities for high-power applications. It is ideal for use in high-efficiency, high-reliability power supply systems, DC/DC converters, inverters, and electrostatic discharge protection. Its low gate-to-source capacitance, low turn-on and turn-off delays, and extremely low threshold voltage enable high-frequency operation and improved efficiency.

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