NTMFS4C025NT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

NTMFS4C025NT1G is a 30 Volt, 20 Amperes N-Channel Enhancement Mode MOSFETs with a die pad for improved thermal dissipation. It is the latest addition to Fairchild’s 40V power MOSFET family. Designed with the advanced trench MOSFET structure, it provides significant improvement in performance over other MOSFETs. As compared to its predecessor NTMFS4C025NLT1G, its on-resistance has been improved by 30%. This clearly demonstrates its extraordinary performance in power switching applications.

Application Field

NTMFS4C025NT1G is specifically designed to meet the requirements of low voltage, high current applications such as load switch, DC-DC converters, switching regulators, power amplifiers, power controllers, and other medical equipment. Fairchild’s N-Channel Enhancement Mode MOSFET is also suitable for switching applications in computing, telecom and consumer electronics. In addition, it is also ideal for automotive applications such as PWM and high side switch, battery isolation and load switch, POP socket and backlighting.

Working Principle

The metallic oxide semiconductor FET (MOSFET) is a field effect transistor which utilizes the transfer of electron charge between two isolated, doped regions of a semiconductor material. It is of interest because of its numerous advantageous characteristics including low power dissipation, low gate drive requirements, wide dynamic range, and good high speed switching characteristics. The gate of the device is an insulated gate, so it requires very little bias voltage in order to control the current flow through the device and it can operate over a wide range of frequencies. The channel of a MOSFET is the conducting region between the source and the drain and is typically referred to as the "body" or "bulk". The resistance of the channel is determined by the threshold voltage, which is slightly different for each type of semiconductor material. As the gate voltage is changed, the current flowing through the channel is correspondingly changed by a factor of thousands.

Conclusion

NTMFS4C025NT1G is an excellent choice for high current, low voltage applications due to its outstanding performance over other MOSFETs. It provides significant improvements in performance and its on-resistance has also been improved by 30%. Its excellent features also make it suitable for a variety of applications such as computing, telecom, consumer electronics and automotive. Its superior characteristics along with its advanced trench MOSFET structure provide a great advantage to its users.

The specific data is subject to PDF, and the above content is for reference