NTMFS4C06NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFS4C06NT1GOSTR-ND |
Manufacturer Part#: |
NTMFS4C06NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 11A SO8FL |
More Detail: | N-Channel 30V 11A (Ta), 69A (Tc) 770mW (Ta), 30.5W... |
DataSheet: | NTMFS4C06NT1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 770mW (Ta), 30.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1683pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 69A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTMFS4C06NT1G is part of the ON Semiconductor family of high-performance, low-voltage, enhancement-mode millimeterwave gate edge field-effect transistors (FETs) including N‐Channel and P‐Channel types. It is widely used in applications where superior millimeterwave performance with high-efficiency switching capability is required.
The NTMFS4C06NT1G is a voltage controlled MOSFET type FET. It features two N-Channel configurations that are suitable for a variety of general purpose applications. The NTMFS4C06NT1G has a maximum drain-source voltage rating of 20V, allowing for high-voltage operation. The device offers excellent switching characteristics, with an on-resistance rating of 1.4Ohm and a drain current rating of 66A. It also features low distortion, low gate charge, and excellent thermal stability.
The working principle of the NTMFS4C06NT1G is similar to other enhancement-mode MOSFETs. It is mainly used as a switching device in AC/DC applications. When a positive voltage is applied to the gate of the MOSFET, electrons within the device are displaced, creating an inversion region in the channel and facilitating channel current conduction. As the gate voltage increases, the channel current increases accordingly and the conductivity of the device increases. When the gate voltage is reduced to zero, the channel current drops to its original value and the device is off.
Given its superior performance, the NTMFS4C06NT1G is widely used in various applications. It can be used in power conversion circuits, power amplifiers, and high-frequency detectors, among others. It is also used in high-frequency switching circuits, such as DWDM systems, as well as in optical communication systems. Additionally, it is also an excellent choice for high-voltage DC to AC voltage conversion. The device is typically used in applications that require fast switching performance and high breakdown voltage.
In conclusion, the NTMFS4C06NT1G is an excellent device for various applications that require superior millimeterwave performance with high-efficiency switching capability. The device features superior switching characteristics, excellent thermal stability, and low gate charge, making it an ideal choice for high-voltage AC/DC switching applications. Additionally, its enhancement-mode working principle makes it easy to use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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