![NTMFS4C50NT3G Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | NTMFS4C50NT3G-ND |
Manufacturer Part#: |
NTMFS4C50NT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 46A SO8FL |
More Detail: | MOSFET N-CH 30V 46A SO8FL |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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NTMFS4C50NT3G is a single n-channel enhancement-mode MOSFET. It is highly reliable with low on-state resistance and excellent switching performance. This type of MOSFET is commonly used in high-speed communication and power management applications, such as in switching circuits, DC/DC converters, and power amplifiers.
The working principle of a MOSFET is based on the fact that the gate voltage controls the flow of current through the channel between the source and drain. When the gate voltage is increased, more electrons are drawn through the channel and the resulting current increases. When the gate voltage is decreased, fewer electrons are drawn through the channel and the resulting current decreases.
The key features of NTMFS4C50NT3G include a low threshold voltage, a breakdown voltage of 60V, a rated drain-source voltage of 60V, and a maximum drain current of 8.75A. It also features a low on-resistance of 7.5mΩ, a high transconductance of 3.2S, and a fast switching speed of 10ns. Additionally, the device has a high power dissipation capability of 20W.
NTMFS4C50NT3G is widely used in PWM applications such as inverters, motor drives, and switching regulators. In these applications, the device can control the speed of a motor by varying the voltage applied to the gate region of the MOSFET. The device is also used in high frequency, high power communication amplifiers, such as in mobile phones, base stations, and other wireless communication systems. Due to its low on-resistance and fast switching speed, NTMFS4C50NT3G is also used for power management in low voltage circuits, such as in Li-ion battery packs.
In summary, NTMFS4C50NT3G is a single n-channel enhancement mode MOSFET with many key features, such as its low threshold voltage, breakdown voltage of 60V, rated drain-source voltage of 60V, maximum drain current of 8.75A, low on-resistance of 7.5mΩ, high transconductance of 3.2S, and fast switching speed of 10ns. It is commonly used in high-speed communication and power management applications, such as in switching circuits, DC/DC converters, and power amplifiers. It is also used in PWM applications such as inverters, motor drives, and switching regulators, as well as in high frequency, high power communication amplifiers, and for power management in low voltage circuits.
The specific data is subject to PDF, and the above content is for reference
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