![NTMFS4C53NT3G Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | NTMFS4C53NT3G-ND |
Manufacturer Part#: |
NTMFS4C53NT3G |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 38A SO8FL |
More Detail: | MOSFET N-CH 30V 38A SO8FL |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.26980 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NTMFS4C53NT3G is a single N-Channel 60V (D-S) MOSFET with a 0.009ohm maximum drain source resistance (RDS(on)). The device is a type of low voltage (60V) MOSFET that is specifically used for switching, current sensing, and level shifting applications. The device features low on-state resistance (RDS(on)) and low capacitance, making it ideal for use in high frequency or low power applications which require small gate control signals. Additionally, the NTMFS4C53NT3G is an enhancement mode MOSFET, which requires an applied voltage to the gate to allow current to pass through the channel.The NTMFS4C53NT3G is usually used in applications such as DC to DC converters, DC motor drives, and power management systems. In DC to DC converters, the device is used as a switch to control the conversion of a DC voltage to a different level. In DC motor drives, the device can be used as a switch to control the current supplied to the motor. In addition, the NTMFS4C53NT3G can be used in power management systems to switch high currents.The NTMFS4C53NT3G has a very low RDS(on) which makes it an ideal choice for low power applications requiring small gate control signals. Furthermore, the device’s low thermal resistance allows it to be used in high power applications requiring high current carrying capability. Additionally, the device features an integrated body diode, which provides inductive kickback protection in power electronic applications. The way a MOSFET works is, when a positive gate-to-source voltage is applied, electrons start to fill the channel which reduces the resistance between the source and drain. This creates a conductive path between the source and drain, allowing current to flow. As the gate-to-source voltage is increased, the channel becomes more conductive and allows more current to flow. Conversely, when the gate-to-source voltage is removed, the channel is deactivated and no current flows through the channel.Overall, the NTMFS4C53NT3G is a low voltage MOSFET which is used in high frequency and low power applications that require small gate control signals. It is an ideal choice for applications such as DC to DC converters, DC motor drives, and power management systems. The device’s low RDS(on) and integrated body diode make it well suited for powering high power applications and protecting against inductive kickback.
The specific data is subject to PDF, and the above content is for reference
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