NTMFS4C55NT1G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1972pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11.9A (Ta), 78A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

NTMFS4C55NT1G is a single field-effect transistor (FET) device from ON Semiconductor, also known as an N-channel power MOSFET. This type of FET is typically used for power management applications, but can also be used for many other purposes, including logic-level and analog signal control. This article provides an overview of the application areas for the NTMFS4C55NT1G and describes how it achieves its functionality.

Applications

The NTMFS4C55NT1G can be used for a variety of applications because of its high power efficiency and ability to handle high currents. Common applications include:

• Power supply design
• DC-DC converters
• DC motor control
• Overload protection circuits
• Lighting control
• Switch-mode power supplies
• Regulated power supplies
• Battery charging circuits
• High-side solutions
• LED drivers
• Relay driver circuits
• Inverter circuits
• Audio amplifiers

The NTMFS4C55NT1G has a very high current capacity, up to 10A, making it ideal for applications that require high currents. It has an onboard temperature sensor which helps to prevent it from overloading and a maximum drain-source breakdown voltage of 28V. The device is also capable of very fast switching speed, with a specified rise and fall time of 8ns. This makes it well-suited for applications that require very fast response times, such as switch-mode power supplies.

Working Principle

The NTMFS4C55NT1G is a metal-oxide semiconductor field-effect transistor (MOSFET), which is a type of field-effect transistor. A MOSFET works by using an electric field to control the conductivity of an insulated metal gate. When an electric field is applied to the gate, the semiconductor material below it changes its conductivity and allows current to flow through it. The electric field is usually induced by a voltage applied to the gate, but can also be induced by a current.When a voltage is applied, the electric field will spread to the other side of the insulating layer near the gate and create a depletion region. This region, where the field spreads, is called the channel. Electrons in the channel will be attracted to the gate and allow current to flow from one side of the channel to the other. The voltage which is applied to the gate and creates the electric field is called the gate voltage or gate-source voltage.The amount of current which can flow through the channel is determined by the size of the channel, and can be increased by increasing the size of the gate. The NTMFS4C55NT1G device has an effective gate width of 8.5μm and an effective gate length of 0.45μm, so it is capable of handling high currents.

Conclusion

The NTMFS4C55NT1G is a single field-effect transistor device from ON Semiconductor, and it is typically used for power management applications, such as power supply design, DC-DC converters, motor control, and overload protection. This device is characterized by its high current capacity, up to 10A, very fast switching speed, and onboard temperature sensor. It works by using an electric field to control the conductivity of an insulated metal gate, and the amount of current it can handle is determined by the size of the channel. With these features, the NTMFS4C55NT1G is an ideal device for a wide range of applications.

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