NTMFS4H01NT3G

Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5693pF @ 12V
FET Feature:	--
Power Dissipation (Max):	3.2W (Ta), 125W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	54A (Ta), 334A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	0.7 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	85nC @ 10V

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NTMFS4H01NT3G is a single N-channel MOSFET that is produced by ON Semiconductor. It is mainly used in power management applications such as synchronous rectification and PFC. The NTMFS4H01NT3G is a reliable transistor suitable for a variety of applications.The NTMFS4H01NT3G is a MOSFET (metal-oxide-semiconductor field-effect transistor) with an N-channel configuration. This means that the transistor is composed of a source, drain, and gate-all connected to an N-type semiconductor. This type of configuration allows current to readily flow from the source to the drain when the gate is charged. The NTMFS4H01NT3G is commonly used for controlling high voltages and current. It’s also widely used for switching applications, as well as for digital control.The NTMFS4H01NT3G offers a wide variety of benefits, such as low on-resistance, fast switching, low gate capacitance, and excellent thermal stability. With a low RDS(on) of 0.5mΩ and a maximum drain current of 9A, the NTMFS4H01NT3G is a suitable choice for power management applications. The NTMFS4H01NT3G is designed to work with a supply voltage of 12V and gate voltage of 5V. The maximum gate-source voltage (VGS) is 20V and the max drain-source voltage (VDS) is 55V. It offers a wide operating temperature range of -55°C to 150°C.The NTMFS4H01NT3G has a wide range of applications. One common application is synchronous rectification, which is a type of rectification process used in switching power supplies. It is used to improve efficiency and reduce ripple when converting AC to DC power. The NTMFS4H01NT3G is also used in power factor correction (PFC) circuits, which is used to maintain a sinusoidal voltage waveform. Additionally, it is used in power amplification circuits, motor control, and in other industrial applications.The NTMFS4H01NT3G has a number of advantages that make it suitable for many applications. It offers good efficiency and is capable of handling large currents. It is also highly reliable and has a wide temperature range. Additionally, the NTMFS4H01NT3G is inexpensive and is a great choice for cost-sensitive applications.In conclusion, the NTMFS4H01NT3G is a single N-channel MOSFET manufactured by ON Semiconductor. It offers a low RDS(on) of 0.5mΩ and is suitable for a wide variety of applications such as synchronous rectification, PFC, power amplification, and motor control. With its low cost, good efficiency, and wide temperature range, it’s a reliable transistor for power management applications.

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