NTMFS5C404NT3G Allicdata Electronics
Allicdata Part #:

NTMFS5C404NT3G-ND

Manufacturer Part#:

NTMFS5C404NT3G

Price: $ 1.65
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 53A 378A 5DFN
More Detail: N-Channel 40V 53A (Ta), 378A (Tc) 3.9W (Ta), 200W ...
DataSheet: NTMFS5C404NT3G datasheetNTMFS5C404NT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 1.48378
Stock 1000Can Ship Immediately
$ 1.65
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
FET Feature: --
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Description

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NTMFS5C404NT3G is a type of Field Effect Transistor (FET) that operates in a single mode. It is a small signal N-channel MOSFET or Metal Oxide Semiconductor FET. It has a high current rating of 10Amps and a wide range of current gain and noise figures that make it suitable for a variety of different applications.

To understand the NTMFS5C404NT3G application field and working principle, it is important to first understand the basics of FETs, MOSFETs, and the single mode operation. FETs are made up of two electrodes and are operated by the flow of electric current between them. MOSFETs, or Metal Oxide Semiconductor FETs, on the other hand, have an additional gate component. This gate component makes it possible to electronically control the flows of current, allowing for higher and more efficient operations.

The NTMFS5C404NT3G falls into the single mode FET category as it works on a single gate or channel for current flow. The single gate or channel allows the device to perform both a small-signal and a large-signal operation depending upon the system or application requirements. For small-signal operation, when a small amount of current is applied to the device, it acts as a voltage amplifier in order to increase power and transfer data. For large-signal operation, the device is designed to work on higher voltages to provide large amounts of current and power, while still functioning efficiently.

In terms of applications, the NTMFS5C404NT3G can be used in a wide array of fields such as audio/video applications, medical systems, communications networks, automotive, and consumer electronics. It is used to support voltage amplification needs, including amplifier and level-shifting circuits. It can also be used in power switching applications, such as for amplifiers, LEDs, and for controlling servo motors, as well as for power MOSFETs and analog plate amplifiers.

The NTMFS5C404NT3G also has a variety of features that make it suitable for all these different types of applications. First, its 100V breakdown voltage makes it more reliable and able to handle large voltage swings. Second, its 10.0A current rating allows it to handle more power and larger signals. Additionally, it has a high current rating that helps it to provide efficient operations in all applications. Finally, its low noise figure of 0.55mV and low distortion of -55dB make it the ideal device for audio and video applications.

The NTMFS5C404NT3G is a type of Field Effect Transistor (FET) that operates on a single mode. It is a small signal N-channel MOSFET or Metal Oxide Semiconductor FET. It has a high current rating of 10Amps and a wide range of current gain and noise figures that make it suitable for a variety of applications, such as audio/video, medical systems, communications networks, automotive and consumer electronics. Its 100V breakdown voltage, 10.0A current rating, low noise figure of 0.55mV, and low distortion of -55dB make it the ideal device for voltage amplification and power switching applications.

The specific data is subject to PDF, and the above content is for reference

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