NTMFS5C426NT1G Discrete Semiconductor Products

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Modern electronic circuitry is rife with a variety of transistors with a range of features, capabilities and limitations. One of them is the NTMFS5C426NT1G. This particular type of transistor is classified as a single n-channel metal–oxide–semiconductor field-effect transistor (MOSFET). MOSFETs are sometimes referred to as insulated gate transistors and belong to the family of field-effect transistors (FETs).

NTMFS5C426NT1G transistors are designed to be used in very low-power and low current applications that require high switching speed and good gate drive capability. This type of transistor has an operating temperature range of -55°C to +150°C and is sold in surface mount packages for ease of use. It is usually used in applications such as switching regulators, Digital Logic, Interface Circuits, low-side switching, battery management, Darlington driver/output stages and motor control.

The main feature of an NTMFS5C426NT1G transistor is its low on-resistance. The on-resistance or “Rdson” is the resistance between the drain and source terminals when the device is in the “on” state. This low on-resistance makes the transistor ideal for applications where power efficiency is important. The low Rdson also enables the transistor to be used for high speed switching applications.

At the heart of the NTMFS5C426NT1G is a metal–oxide–semiconductor structure, which is composed of three layers, the gate, the source, and the drain. The gate, which is situated between the source and drain, is insulated from them by a thin layer of oxide. The gate is also connected to a control signal and can be used to control the flow of current between the source and the drain.

When a positive voltage is applied to the gate, it attracts mobile charge carriers, which in turn create a conductive channel between the source and drain. This increases the flow of electrons between the source and drain thus allowing current to flow. When the positive voltage is removed, the gate loses its attraction to the charge carriers and the channel closes, thus stopping the flow of current.

Additionally, the NTMFS5C426NT1G transistor has a maximum voltage rating of 40V, which is suitable for many applications. It also has an input capacitance of 13pF and an output capacitance of 18pF, making it suitable for high-frequency switching applications. It also has a maximum gate charge of 27nC, gate resistance of 4.5 ohms and maximum Continuous Drain Current (ID) of 4A.

Overall, the NTMFS5C426NT1G is an ideal transistor for applications that require high switching speed, low on-resistance and good gate drive capability. It has a wide operating temperature range and excellent voltage ratings making it well-suited for a range of low-power and low-current applications such as switching regulators, Digital Logic, Interface Circuits, low-side switching, battery management, Darlington driver/output stages and motor control.

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