NTMFS5C442NLT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFS5C442NLT1GOSTR-ND |
Manufacturer Part#: |
NTMFS5C442NLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 25A SO8FL |
More Detail: | N-Channel 40V 27A (Ta), 130A (Tc) 3.1W (Ta), 69W (... |
DataSheet: | NTMFS5C442NLT1G Datasheet/PDF |
Quantity: | 1500 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 69W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 130A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTMFS5C442NLT1G is a single P-channel, low voltage metal–oxide–semiconductor field-effect transistor (MOSFET). It is typically used in applications where high speed switching is necessary, such as power management, DC-DC conversion, and audio amplifier circuits. The device is provided in a SOT-23 package, and is composed of a single P-channel MOSFET with an integrated source resistor for ESD protection.
A MOSFET is an active component that acts as a current regulating device. It is made up of a metal gate, a metal–oxide semiconductor layer, and a substrate. The metal–oxide semiconductor layer acts as the control element, while the substrate acts as the drain–source. When a voltage is applied to the gate, it changes the resistance of the metal–oxide semiconductor layer, allowing current to flow through the substrate. By controlling the amount of voltage applied to the gate, the resistance of the metal–oxide semiconductor layer can be changed.
When using the NTMFS5C442NLT1G in a circuit, the gate voltage can be used to control the amount of current that flows through the device. The threshold voltage of the device is 3.0 V, so any gate voltage above this level will cause current to flow. The gate voltage can be used to either turn the current on or off, allowing for precise control of the device.
The NTMFS5C442NLT1G provides a low threshold voltage and a relatively high source–drain current rating. These characteristics make it suitable for a wide range of applications, such as DC–DC converters, power supplies, and audio amplifiers. The device also includes an integrated ESD protection element, which makes it resistant to ESD damage.
The NTMFS5C442NLT1G is an excellent all-purpose MOSFET that can be used in a wide range of applications. It is capable of switching large amounts of current at high speeds and is relatively resistant to ESD damage. By controlling the gate voltage, the amount of current that can flow through the device can be precisely controlled.
The specific data is subject to PDF, and the above content is for reference
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