NTMFS5C442NT1G Discrete Semiconductor Products

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The NTMFS5C442NT1G is a single n-channel field-effect transistor (FET) manufactured by ON Semiconductor, suitable for use in a wide range of applications.

Field-effect transistors (FETs) are active solid-state semiconductor devices that rely on an electric field to control the movement of electrons and holes within their structure. Additionally, FETs have the unique ability to amplify or switch electrical signals in a wide variety of applications requiring both high-efficiency and low-noise operation. This makes them ideal for use in amplifiers, and also makes them excellent candidates for switching applications when paired with appropriate external circuitry.

The NTMFS5C442NT1G is a single n-channel FET. An n-type FET is one in which the semiconductor material used to construct the channel includes materials with extra electrons. A channel in an n-type FET is conductive, so that when a positive voltage is applied to the device\'s source, the current is allowed to flow from the source to the drain. Additionally, when a negative voltage is applied to the gate, the channel closes and current is blocked, creating a switch-like effect.

The particular NTMFS5C442NT1G features an operating temperature of -55 to 150 °C, a drain-source breakdown voltage (BVDSS) of 28 V, an on-resistance (RDS(on)) of 4.42 Ω, and an on-resistance (RDS(on)) flatness of 4.7%. All these characteristics make it an ideal choice for applications where low-noise, high-efficiency, and long-term reliability are desired. Examples include battery-powered, embedded, and processor-controlled systems in the commercial, industrial, and telecom sectors.

The NTMFS5C442NT1G, like all FETs, works on the principle of the field effect. In this operation, a voltage applied to the device\'s gate creates an electric field which, in turn, is used to control the current flow between the source and the drain. This is done by inducing a change in the resistance of the semiconductor material used to construct the channel. The magnitude of this change is determined by the voltage applied to the gate, which so can be used to control the amount of current that is allowed to flow.

In summary, the NTMFS5C442NT1G is an excellent choice for a wide range of applications requiring high-efficiency and low-noise operation. This single n-channel FET features an operating temperature of -55 to 150 °C, a drain-source breakdown voltage (BVDSS) of 28 V, an on-resistance (RDS(on)) of 4.42 Ω, and an on-resistance (RDS(on)) flatness of 4.7%. Its field-effect working principle allows for the safe and efficient amplification and switching of electrical signals, making it a versatile solution for many applications.

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