NTMFS5C442NT3G Allicdata Electronics
Allicdata Part #:

NTMFS5C442NT3G-ND

Manufacturer Part#:

NTMFS5C442NT3G

Price: $ 0.57
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 29A 140A 5DFN
More Detail: N-Channel 40V 29A (Ta), 140A (Tc) 3.7W (Ta), 83W (...
DataSheet: NTMFS5C442NT3G datasheetNTMFS5C442NT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.51802
Stock 1000Can Ship Immediately
$ 0.57
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
FET Feature: --
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Description

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The NTMFS5C442NT3G is a type of single field-effect transistor (FET). It is a power MOSFET device with a 150V drain-source voltage and -100V gate-source voltage. As a power FET, the NTMFS5C442NT3G is designed for applications where efficient power switching is needed. It is typically used in high-current, low-voltage circuits, such as motor drives.

The NTMFS5C442NT3G features high switching speeds and low on-resistance for fast and reliable switching operation. The device boasts low output capacitance and gate charge for excellent noise immunity, and features an integrated thermal and ESD protection circuit that prevents excessive power dissipation and damage to the component. The component also features an environmental-friendly, lead-free package.

To effectively use the NTMFS5C442NT3G, it is important to understand its operating principles. The device works by using the fast switching speed of the MOSFET and the low on-resistance of the device to open and close a circuit quickly and efficiently. The ability of the device to rapidly switch makes it ideal for motor applications, where it can be used to open and close the electrical connection to a motor quickly.

The device itself works by a process called depletion and enhancement. When the gate-source voltage is increased, the MOSFET creates a depletion region around the drain vector, which leads to an increase in the drain-source resistance. As the gate-source voltage is decreased, the depletion region shrinks, leading to a decrease in the resistance between the drain and source, effectively allowing current to flow through the device.

When used correctly, the NTMFS5C442NT3G can be used to control the amount of current going through a given circuit. When the gate-source voltage applied to the device is increased, the resistance between the drain and the source increases and less current can pass through. Inversely, when the gate-source voltage is reduced, the resistance decreases and more current can pass through.

Typically, the NTMFS5C442NT3G is used for switching applications, such as motor drives. The device can be used to rapidly open and close the circuit, which is needed for motor applications. The device also features low on-resistance and excellent noise immunity, which make it suitable for applications where high-speed and high-precision switching is required.

The NTMFS5C442NT3G is a single FET power MOSFET device with a 150V drain-source voltage and -100V gate-source voltage. It works by using the MOSFET\'s fast switching speed and low on-resistance to open and close a circuit quickly and efficiently. It is typically used in high-current, low-voltage circuits, such as motor drives, and offers low output capacitance and gate charge for excellent noise immunity. With its robust construction and reliable operation, the NTMFS5C442NT3G is an ideal choice for a wide range of power switching applications.

The specific data is subject to PDF, and the above content is for reference

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