NTMFS5H409NLT1G Discrete Semiconductor Products

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NTMFS5H409NLT1G Application Field and Working Principle
• Introduction
The NTMFS5H409NLT1G is a single N-Channel Enhancement Mode Field-Effect Transistor (FET) made using the 2nd Generation MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology. The device features low on-resistance, low gate charge, low input and output capacitance, and superior switching characteristics. It is ideal for applications where space saving is a priority. The NTMFS5H409NLT1G is rated at 40V drain-source breakdown voltage (BVDSS) and 75A drain current (ID). It is designed for pulse operation under extreme temperature, humidity and vibration conditions.
• Application Field
The NTMFS5H409NLT1G has a wide range of applications in commercial and industrial applications. The device is suitable for power supplies, switched-mode power supplies, Class D and Class AB audio amplifiers, motor control applications, and computer peripherals. In addition, it is commonly used in the automotive and telecommunications industries. The features of the device make it suitable for applications that require low-loss signal transmission, fast-switching speed, and pulse control. The low resistance, low gate charge, and low input and output capacitance provide improved signal edge quality, reduced switch on and off times, and improved system reliability.
• Working Principle
The NTMFS5H409NLT1G FET relies on the principle of maintaining an inversion layer between the source and drain. This inversion layer is generated when voltage is applied to the control gate, creating a conducting channel between the source and drain. The drain-source voltage (VDS) is the voltage difference between the drain and source terminals. The gate-source voltage (VGS) is the voltage difference between the gate and source. The source is usually kept at ground potential.When the gate voltage (VGS) is below the threshold voltage (VGS(th)), the channel between the source and drain is pinched off and no current flows through. As the voltage increases, the channel becomes more conductive and more current begins to flow. At a certain point, known as the saturation region, the channel has been fully opened and the full current flows through. The NTMFS5H409NLT1G can handle currents up to 75A at a drain-source voltage of up to 40V.
• Conclusion
In conclusion, the NTMFS5H409NLT1G is a single N-Channel Enhancement Mode FET that is ideal for applications where space saving is a priority. It features low on-resistance, low gate charge, low input and output capacitance and superior switching characteristics. The device is suitable for power supplies, switched-mode power supplies, Class D and Class AB audio amplifiers, motor control applications, and computer peripherals. The working principle of the device relies on the principle of maintaining an inversion layer between the source and drain. This inversion layer is generated when voltage is applied to the control gate, creating a conducting channel between the source and drain.

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