NTMFS6B03NT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTMFS6B03NT1GOSTR-ND |
Manufacturer Part#: |
NTMFS6B03NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 19A SO8FL |
More Detail: | N-Channel 100V 19A (Ta), 132A (Tc) 3.4W (Ta), 165W... |
DataSheet: | NTMFS6B03NT1G Datasheet/PDF |
Quantity: | 1500 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.4W (Ta), 165W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta), 132A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTMFS6B03NT1G is a single discrete N-channel enhancement-mode power field-effect transistor (FET) designed for general purpose applications. It is designed to handle a wide range of voltage and temperature limits, and has been rigorously tested for reliability and performance at high power. This allows the NTMFS6B03NT1G to provide a high level of switching performance in a wide variety of applications. This article will discuss the application field and working principle of the NTMFS6B03NT1G.
Application Field
The NTMFS6B03NT1G is suitable for a wide range of applications including switching, power management, and motor control. It is especially suitable for the smaller scale applications that require the use of a single discrete FET, such as LED lighting and motor drivers. Other applications include power MOSFET drivers, gate drives, and gate drivers. It can also be used as an amplifier, in power supply applications, or in voltage regulator circuits.
Working Principle
The NTMFS6B03NT1G is designed to operate as an enhancement-mode FET, meaning that it has an internal bias, or gate voltage, that is higher than the source voltage. This is due to the presence of a metal-oxide-semiconductor (MOS) insulating layer between the gate and channel region. When the gate voltage is increased, the electrical field between the gate and the channel region increases, causing the channel to “pinch off” and deplete, thus creating a conductive path between the source and drain, allowing for current flow. This type of FET is often referred to as an “PIN” (positive-intrinsic-negative) FET.
The NTMFS6B03NT1G has a voltage threshold range of 0.7 to 4.5V, and is designed to withstand temperatures up to 150°C. Its maximum current rating is 8A, and its drain-source on-resistance (RDS) is 45mOhm. The NTMFS6B03NT1G is available in a variety of packages, including SOT-23, TO-92 and 3-lead TO-220.
In conclusion, the NTMFS6B03NT1G is a single discrete N-channel FET designed for general purpose applications. It is suitable for a wide range of applications, including switching, power management, and motor control. It is capable of handling a wide range of voltages and temperatures, and can be used as an amplifier, in power supply applications, or in voltage regulator circuits.
The specific data is subject to PDF, and the above content is for reference
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