NTMFS6B03NT1G Allicdata Electronics

NTMFS6B03NT1G Discrete Semiconductor Products

Allicdata Part #:

NTMFS6B03NT1GOSTR-ND

Manufacturer Part#:

NTMFS6B03NT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 19A SO8FL
More Detail: N-Channel 100V 19A (Ta), 132A (Tc) 3.4W (Ta), 165W...
DataSheet: NTMFS6B03NT1G datasheetNTMFS6B03NT1G Datasheet/PDF
Quantity: 1500
Stock 1500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.4W (Ta), 165W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 132A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTMFS6B03NT1G is a single discrete N-channel enhancement-mode power field-effect transistor (FET) designed for general purpose applications. It is designed to handle a wide range of voltage and temperature limits, and has been rigorously tested for reliability and performance at high power. This allows the NTMFS6B03NT1G to provide a high level of switching performance in a wide variety of applications. This article will discuss the application field and working principle of the NTMFS6B03NT1G.

Application Field

The NTMFS6B03NT1G is suitable for a wide range of applications including switching, power management, and motor control. It is especially suitable for the smaller scale applications that require the use of a single discrete FET, such as LED lighting and motor drivers. Other applications include power MOSFET drivers, gate drives, and gate drivers. It can also be used as an amplifier, in power supply applications, or in voltage regulator circuits.

Working Principle

The NTMFS6B03NT1G is designed to operate as an enhancement-mode FET, meaning that it has an internal bias, or gate voltage, that is higher than the source voltage. This is due to the presence of a metal-oxide-semiconductor (MOS) insulating layer between the gate and channel region. When the gate voltage is increased, the electrical field between the gate and the channel region increases, causing the channel to “pinch off” and deplete, thus creating a conductive path between the source and drain, allowing for current flow. This type of FET is often referred to as an “PIN” (positive-intrinsic-negative) FET.

The NTMFS6B03NT1G has a voltage threshold range of 0.7 to 4.5V, and is designed to withstand temperatures up to 150°C. Its maximum current rating is 8A, and its drain-source on-resistance (RDS) is 45mOhm. The NTMFS6B03NT1G is available in a variety of packages, including SOT-23, TO-92 and 3-lead TO-220.

In conclusion, the NTMFS6B03NT1G is a single discrete N-channel FET designed for general purpose applications. It is suitable for a wide range of applications, including switching, power management, and motor control. It is capable of handling a wide range of voltages and temperatures, and can be used as an amplifier, in power supply applications, or in voltage regulator circuits.

The specific data is subject to PDF, and the above content is for reference

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