Allicdata Part #: | NTTFS4943NTWG-ND |
Manufacturer Part#: |
NTTFS4943NTWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 8A 8WDFN |
More Detail: | N-Channel 30V 8A (Ta), 41A (Tc) 840mW (Ta), 22.3W ... |
DataSheet: | NTTFS4943NTWG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 840mW (Ta), 22.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1386pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 41A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTTFS4943NTWG is a type of Single Transistor Field Effect Transistor (FET). It is designed to provide excellent saturation characteristics and low drain-source insertion loss over a wide range of frequencies.
The major function of the NTTFS4943NTWG is to provide a high-current threshold switch between its drain and source, turning it on when the voltage between the two terminals is greater than the device\'s threshold voltage. It has a low maximum drain-source resistance of 0.78 Ω and a maximum breakdown voltage of 55 volts, as well as a maximum drain-source capacitance of 0.54 picofarads.
A practical application of the NTTFS4943NTWG lies in switching power supply circuits. Its saturation characteristics allow it to switch quickly in order to deliver a constant steady output current. It can also be used for switching circuitry in amplifiers and high current modulation applications.
The NTTFS4943NTWG transistor operates in enhancement mode at its drain and source terminals. That means, with no signal applied to its gate terminal, it will remain in a blocked state and no current will flow from its drain to its source. However, when a signal is applied to the gate terminal, it will produce a "gate effect" which will allow current to flow from the drain to the source. The strength of the signal applied to the gate terminal will determine how the device conducts the current.
Since the NTTFS4943NTWG works in an enhancement mode, it can be used in applications that require high input impedance. This is because the gate terminal of the device is connected to a resistor which is used to bias the transistor into the correct operating state. This resistor creates a high impedance at the gate, thereby preventing any unwanted signals from entering the device.
The NTTFS4943NTWG can also be used in radio frequency (RF) circuits. Its low internal capacitance and inductance, combined with its low gate capacitance and its high transconductance, make it ideal for use in applications such as RF amplifiers and modulators. Its low gate capacitance also allows it to operate with higher frequencies.
In summary, the NTTFS4943NTWG transistor is a versatile device which can be used for a variety of applications. Its high saturation current, low insertion loss, low drain-source resistance, and low gate capacitance make it suitable for a wide range of applications including power supply circuits, RF circuits, and high current modulation circuits.
The specific data is subject to PDF, and the above content is for reference
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