NTTFS4C02NTAG Discrete Semiconductor Products

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NTTFS4C02NTAG is a single N-channel Enhancement Mode Power MOSFET produced using advanced STMicroelectronics’ proprietary trench process technology. This technology has been especially optimized for Resistance-Capacitance (RC) applications. The device is designed to be used in switching and voltage control applications. It is also suitable for use in low voltage, high power applications. The NTTFS4C02NTAG is designed to operate as a current source, with very low gate threshold voltage (VGSth) and high breakdown voltage (BVDSS). It is built from the latest generation of trench technology MOSFETs, incorporating a gate dielectric that is three times stronger than the previous generation. As a result, it is able to handle higher gate voltages and higher drain currents for maximum efficiency. The main features of the NTTFS4C02NTAG include a low threshold voltage (VGSth) of 0.3V and a high maximum drain current (IDSS) of 8A. The device also has low RDS(ON) for low on resistance for high efficiency, and is RDS(ON) temperature-compensated for improved temperature performance. The device also has an extremely low input capacitance (Ciss) of 1.2pF, making it suitable for high switching frequency applications. The working principle of the NTTFS4C02NTAG is based on the open drain principle. This means that the gate of the MOSFET acts as an open drain and the source acts as a positive voltage. When a positive gate voltage (VGS) is applied, a channel is formed between the source and the drain and current (ID) will flow through the channel. This means that the resistance between the drain and the source will be very low, resulting in a low voltage drop across the device. With a properly-designed transistor, the voltage drop between the two terminals will be very low when the current (ID) is high. The main applications of the NTTFS4C02NTAG are in power supply design, power management, motor control and DC-DC converters. The device has a wide Gate-Source voltage range, which allows it to be used both as a stand-alone switch for low frequency operations and as a charge-pump for high frequency switching applications. It is also suitable for use in LED and power LED drivers. In summary, the NTTFS4C02NTAG is a single N-channel Enhancement Mode Power MOSFET with low gate threshold (VGSth) voltage, high maximum drain current (IDSS) and low input capacitance (Ciss). Its working principle is based on the open drain principle and it is suitable for use in various power applications, including power supply design, power management, motor control and DC-DC converters. The device also has a wide Gate-Source voltage range and is temperature-compensated for improved performance.

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