NTTFS4C06NTWG Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.2V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-WDFN (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	810mW (Ta), 31W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3366pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	36nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.2 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta), 67A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to NTTFS4C06NTWG Application Field and Working Principle

NTTFS4C06NTWG is a type of single MOSFET transistor, representing the latest advancements in the field of field-effect transistors (FETs). As such, NTTFS4C06NTWG is capable of greatly increased switching speed, higher power dissipation and improved overall reliability. Moreover, due to its single-gate structure, it allows for low on-resistance in both drain-source and gate-source configurations, even at high voltage and low current levels. As such, NTTFS4C06NTWG transistors have been developed for applications ranging from high-frequency power supplies, computing systems and motor drives, to smaller applications such as mobile phones, wireless communication systems and even sensor interfaces.

Physical Characteristics of NTTFS4C06NTWG Transistors

The NTTFS4C06NTWG transistor is a silicon based MOSFET transistor that comes in the form of a TO-220 package. It contains one gate, two source and one drain electrode, arranged in a flat package with an exposed metal silicide surface. The gate and source are connected via an integrated metal oxide layer, while the drain and source are connected directly to the metal oxide without needing an external connection. The NTTFS4C06NTWG features high performance and versatility, with a maximum current rating of 1500mA and a maximum voltage rating of 100V. It also features high speed switching capabilities, with a turn-on and turn-off time of 15ns.

Realted Parameters for NTTFS4C06NTWG

In order to achieve reliable use, several parameters must be kept within specified values for a NTTFS4C06NTWG transistor. These include gate-source voltage, drain-source voltage, channel length and channel width. One of the most important related parameters is gate-source voltage. This is the voltage value between the gate and source electrodes and it determines how much current will be allowed to pass when the device is switched on. Higher gate-source voltages will result in higher current ratings, while lower gate-source voltages will lower the maximum current rating.

Working Principle of NTTFS4C06NTWG

The NTTFS4C06NTWG transistor operates according to the principle of field-effect transistor (FET), which is a three-terminal device composed of a metal oxide layer that serves as an insulation layer between the gate and source electrodes and a semiconductor that acts as a switch controlling the flow of current between the source and drain electrodes. The metal oxide layer permits electrons to move through its capacitor-like structure, whereas the semiconductor material serves to create a barrier between the gate and source and create a depletion region to control the flow of current. When a voltage is applied to the gate electrode, this causes electrons to move from the source to the drain through the oxide layer. If the voltage magnitude is high enough, the semiconductor region between the source and drain will be completely depleted, blocking the current and preventing any more electrons from moving through the device. On the other hand, when the voltage magnitude is decreased, this will cause the depletion region to decrease and allow current to flow through the device.

Conclusion

In conclusion, NTTFS4C06NTWG is a type of single MOSFET transistor designed for use in applications such as high-frequency power supplies, computing systems, motor drives as well as smaller applications such as mobile phones, wireless communication systems and sensor interfaces. This device features a single gate structure, low on-resistance in both drain-source and gate-source configurations, high power dissipation, improved overall reliability and fast switching speed. The operating principles of this transistor depend upon the gate-source voltage, drain-source voltage, channel length, and channel width. It is highly recommended that all related parameters be kept within the specified ranges in order to achieve reliable use.

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