NTTFS4823NTAG Allicdata Electronics
Allicdata Part #:

NTTFS4823NTAG-ND

Manufacturer Part#:

NTTFS4823NTAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 7.1A 8WDFN
More Detail: N-Channel 30V 7.1A (Ta), 50A (Tc) 660mW (Ta), 32.9...
DataSheet: NTTFS4823NTAG datasheetNTTFS4823NTAG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NFET4823NTAG is a single-type field-effect transistor (FET) commonly used in the field of computer and information technology. It is a type of power transistor that is designed to optimize the performance of a computer system or network. The NFET4823NTAG works by controlling the current flow between two terminals located on the same side of a detached gate, which is controlled by a voltage source. This transistor has the ability to gate large currents with high switching speeds and low operating power.

The physical structure of the NFET4823NTAG consists of the source, drain, and gate. The source is connected to the drain and the source is connected to the gate using metal-oxide-semiconductor (MOS) technology. In its most common configuration, the NFET4823NTAG is a four-terminal device. The source, drain, and gate terminals make up three of the four, while the fourth helps provide the necessary bias voltage for the gate.

In its most basic configuration, the NFET4823NTAG is designed to act as an amplifier, allowing it to increase or decrease the current between the two terminals. The gate voltage dictates how much current will flow through the device. If the voltage applied to the gate is increased, the current flow is increased; likewise, decreasing the gate voltage will decrease the current. The gain of this amplifier, known as the transconductance, is determined by the relationship between voltage applied to the gate and current flowing through the channel.

The NFET4823NTAG can also be used to create logic circuits, such as AND, OR, and NOT gates. Combinations of these logic elements can be used to create complex logic functions, such as latch and flip-flop circuits. In these cases, the NFET4823NTAG acts as a switch, either allowing or blocking current depending on the gate voltage. Since there is no physical contact between the gate and the source, this device has the advantage of providing low-power and high-speed operation.

Additionally, the NFET4823NTAG can be used for data transmission and power management. It is often used in analog-to-digital conversion and voltage level shifting applications, as it is capable of coupling two circuits that operate at different potentials. One of the most common applications for this device is for power management in servers or other large computing systems. The NFET4823NTAG can be used to manage current flow between different components of the system, thus allowing the system to run more efficiently.

In summary, the NFET4823NTAG is a versatile field-effect transistor that can be used in a wide range of applications. It is primarily used in the information technology field, where its ability to gate large currents with high switching speeds and low operating power is advantageous. The NFET4823NTAG can be used to amplify signals, create logic circuits, and manage power. With its wide range of uses and low operating power, the NFET4823NTAG is a highly desirable component in today’s technology-driven world.

The specific data is subject to PDF, and the above content is for reference

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