NTTFS5116PLTAG Discrete Semiconductor Products |
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Allicdata Part #: | NTTFS5116PLTAGOSTR-ND |
Manufacturer Part#: |
NTTFS5116PLTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 5.7A 8-WDFN |
More Detail: | P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surfac... |
DataSheet: | NTTFS5116PLTAG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1258pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTTFS5116PLTAG (N-channel 60V, 8A, 35mOhm, 11.6mOhm Toshiba MOSFET) is a high-density vertical DMOS FET (Field-Effect Transistor). It is suitable for applications such as power amplification, motor control, and switching. It can also be used for switching applications requiring high-speed and low-resistance performance.
The working principle of the NTTFS5116PLTAG is based on the phenomenon of the electric field-effect. In this application, an electric field is created when a voltage is applied between the drain and source. The electric field influences the amount of electrical current flowing through the channel. In the ON state, a large amount of current flows between the source and the drain. In the OFF state, the current flow is reduced because the electric field does not affect the electric channel as much as when it is turned on.
The NTTFS5116PLTAG has a breakdown voltage rating of 60V, which is the maximum voltage that can be applied between the drain and source. It also features a low on-resistance of 35mOhm and an on-current of 8A. These specifications allow the device to provide high-efficiency power transfer with low power losses. Additionally, its gate-source capacitance rating is 11.6mOhm, which ensures that the FET operates quickly and accurately.
The NTTFS5116PLTAG is well-suited for use in power amplification applications such as home appliances, where high efficiency and switching speed are required. It is also ideal for motor control applications because of its fast switching time and low power losses. In switching applications, the low on-resistance and breakdown voltage of the device allow it to be used with minimal losses and quick response.
Overall, the NTTFS5116PLTAG is a reliable, efficient, and versatile MOSFET. Its fast switching time, low on-resistance, and high breakdown voltage rating make it suitable for a wide range of applications. It is particularly well-suited for power amplification and motor control tasks, where high efficiency and low power losses are needed.
The specific data is subject to PDF, and the above content is for reference
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