NTTFS5C454NLTWG Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-WDFN (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.2W (Ta), 55W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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N-Channel Enhancement Mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is widely used in modern electronic systems since its high power switching speed and low voltage drive capabilities. The NTTFS5C454NLTWG is a N-channel, enhancement-mode, metal oxide semiconductor field effect transistor which is specially designed for automation, industrial, home appliances and communication circuits. This MOSFET is equipped with a bidirectional channel, high efficiency, low power consumption, and low voltage drive capabilities. Furthermore, it features high switching frequency, high breakdown voltage as well as low resistance characteristics, which makes it highly suitable for various applications.The working principle of NTTFS5C454NLTWG involves a process of modulation and transconductance, which is the fundamental principle of MOSFETs. Basically, the gate of the transistor is used as a control element to control the current flow through the channel. In the off state, the charge carriers in the channel are blocked due to the presence of negative charges on the gate and because of this, the current flow in the channel is completely blocked. In the conduction state, when a positive voltage is applied to the gate terminal, the negative charges on the gate are repelled and this causes a channel to be formed for current to flow through the transistor.The NTTFS5C454NLTWG has a wide variety of applications due to its high frequency characteristics, high current capabilities and low operating voltage. Some of its typical applications include switching power supplies, voltage regulation, pulse width modulation, motor control and low-power logic signals. Furthermore, due to its low on-resistance, these metal oxide semiconductor field effect transistors also finds its use in dynamic circuit applications for switching operations, battery charging and power management. In addition to this, it can also be used in high speed communications, such as in digital TV, video streaming and other high speed data transmission applications.In addition to its wide range of applications, the NTTFS5C454NLTWG also has several attractive features that make it ideal for certain applications. These features include its excellent power dissipation capability, high breakdown voltage, high-frequency operation, low drain-source capacitance, low gate charge and low reverse transfer capacitance. All these features make this MOSFET suitable for use in switching operations, voltage regulation and power management.In conclusion, the NTTFS5C454NLTWG is a N-channel, enhancement-mode, metal oxide semiconductor field effect transistor that is specially designed for automation, industrial, home appliances and communication circuits. It has excellent power dissipation capability and high-frequency operation, making it highly suitable for various applications. It also features low drain-source capacitance, low gate charge, and low reverse transfer capacitance. The working principle of this MOSFET involves a process of modulation and transconductance and its typical applications include switching power supplies, voltage regulation, pulse width modulation, motor control, low-power logic signals, dynamic circuit applications, battery charging and high speed communications.

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