NTTFS5826NLTAG Discrete Semiconductor Products

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The NTTFS5826NLTAG is a N-channel Enhancement Mode Field Effect Transistor (NMOSFET) specially designed for low-voltage operation. It is an advanced power semiconductor device which offers a combination of high-density, high-efficiency and high-speed performance. This device is typically used for power switching applications in the automotive, industrial and consumer markets.

The NTTFS5826NLTAG has an on-resistance (RDSon) of 0.45 ohms with a "soft turn-on" and low gate charge (Qg) which enables higher-current and higher-voltage operation. The device is typically used in switching applications ranging from 10V to 150V and is capable of providing up to 10A at 100°C junction temperature. In addition, the device also offers very low "on" resistance which further enhances its performance.

The NTTFS5826NLTAG is a high-voltage, low-RDSon device that exhibits excellent low-ripple characteristics and high switching speeds. It is well suited for synchronous rectification and high-efficiency power conversion applications in automotive, industrial and consumer markets. The device provides superior ESD performance and has an integrated ESD protection diode for added protection.

Furthermore, the device uses a low-resistance package which eliminates the need for external heatsinks and improves overall system efficiency. It also has enhanced energy efficiency compared to other devices of its size and has an ultra-low RDS(on). The NTTFS5826NLTAG has been designed to withstand high-voltage operation and has a maximum rated Vds of 150V with a low gate-charge of 6nC. The device also supports avalanche energy rating (AER) of 10A at 100°C junction temperature, which increases its usage in high current switching applications.

The working principles of the NTTFS5826NLTAG are quite simple. When gate voltage is applied near the source, it induces a charge which keeps the channel in its off state. The larger the gate voltage, the larger the induced charge, making the channel off. On the other hand, when the gate voltage is taken away, the charge dissipates and the channel will remain in its off state. In order for the device to turn on, a certain threshold voltage must be applied to the gate to neutralize the induced charge and allow the channel to turn on. Once the threshold voltage is reached, the channel will start to conduct and will remain on until the gate voltage is taken away again.

Overall, the NTTFS5826NLTAG is an excellent device for low-voltage and power switching applications. It is capable of providing high-efficiency operation and features a wide operating temperature range, integrated ESD protection and ultra-low RDS(on). In addition, its low gate-charge allows it to operate at higher current and higher voltage which further enhances its performance.

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