NTTFS4941NTWG Allicdata Electronics
Allicdata Part #:

NTTFS4941NTWG-ND

Manufacturer Part#:

NTTFS4941NTWG

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 8.3A 8WDFN
More Detail: N-Channel 30V 8.3A (Ta), 46A (Tc) 840mW (Ta), 25.5...
DataSheet: NTTFS4941NTWG datasheetNTTFS4941NTWG Datasheet/PDF
Quantity: 1000
5000 +: $ 0.48034
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1619pF @ 15V
FET Feature: --
Power Dissipation (Max): 840mW (Ta), 25.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
Description

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NTTFS4941NTWG is a type of N-channel enhancement mode Field-Effect Transistor (FET) that is commonly used in audio application. Due to its low on-resistance and fast switching speed, it is designed to meet the needs of audio power amplifiers and other audio applications. The NTTFS4941 is capable of operating up to 45V and can handle power dissipation of up to 35W.

The NTTFS4941NTWG FET is constructed with an N-type semiconductor material. This is the same material that is used in MOSFET (Metal-Oxide Semiconductor FET) transistors. The construction of the NTTFS4941NTWG FET is based on the D-MOS (Dynamic MOSFET) structure which is a combination of a MOSFET and insulated gate idea, in order to form an efficient power conversion device. It has a gate that is insulated from the conducting channel and can be connected to a voltage source to control the current flow in the device. The device also has a source, drain and body terminals, that allow for the control of the current output.

The NTTFS4941NTWG FET’s application field covers power amplifier, current regulators, switching regulators, RF switching circuitry, voltage regulators, and instrumentation amplifiers. This type of FET also has a higher level of power dissipation and is capable of operating at higher frequencies than ordinary MOSFETs. In addition, the construction of the NTTFS4941NTWG FET provides increased stability, reliability and better noise performance than that of a conventional MOSFET.

The working principle of the NTTFS4941NTWG FET is based on the physical principles of electrical engineering and thermodynamics. It works on the premise that the drain current can be regulated by changing the electrical characteristics of the device. The gate voltage is used to control the current or voltage that passes through the device. When a higher voltage is applied to the gate, the device appears to become more conducting, while a lower voltage decreases the current flow in the device. This feature makes the NTTFS4941NTWG FET suitable for applications such as switching circuits and current regulating.

The NTTFS4941NTWG FET is a versatile type of FET and is suitable for a wide variety of applications. Its ability to provide fast switching speeds, low on-resistance, and the added benefit of increased stability and reliability make the NTTFS4941NTWG FET an ideal choice for audio power amplifiers and other audio applications.

The specific data is subject to PDF, and the above content is for reference

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