NTTFS5116PLTWG Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-WDFN (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.2W (Ta), 40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1258pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	52 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.7A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NTTFS5116PLTWG is a type of transistor, also known as a field effect transistor (FET). FETs are transistors that can be used to amplify a signal or initiate electrical conduction between two points. A key feature of FETs is that they use charge carriers instead of a continuous current for conduction. They act as switches, allowing or preventing current flow in the circuit.NTTFS5116PLTWG is a type of single-gate FET, a type of FET which uses only one gate electrode for its electrical connections. This type of FET has three terminals—a source, a gate, and a drain—which control current flow through the device and between the two terminals.The NTTFS5116PLTWG is a low-power field effect transistor that is designed to handle large signals. It is capable of receiving up to 5A of input power and can handle up to 116 mA of output power with a typical gate-source voltage of 4.1 v. It has a low-on-resistance of 9.2 mΩ, allowing it to handle larger signal voltages. The on-resistance value varies, depending on the type of transistor and the gate voltage applied. It also has a maximum current rating of 110mA and a very low thermal resistance.The working principle of the NTTFS5116PLTWG is based on the electric field generated when a voltage is applied between the gate and source terminals. This electric field creates a depletion region between the gate and source terminals, which means that current cannot flow into or out of the source terminal. The depletion region can be adjusted by varying the gate-source voltage and can also be used to control the output current.As a single-gate FET, the NTTFS5116PLTWG can be used in applications where only one input signal is required. Examples include radio frequency amplifiers, power supplies, and audio amplifiers. The low-on-resistance of the NTTFS5116PLTWG makes them ideal for high-speed switching, and they are often used in power conversion and power management applications.The NTTFS5116PLTWG is also a popular choice for applications that require a high-output current, such as motor speed control, inverter applications, and rectifiers. It can also be used in voltage regulators and voltage multipliers for both positive and negative output.Due to its high-output current capabilities and low-power loss, the NTTFS5116PLTWG is widely used in automation and medical instruments, as well as in power conditioning and power management applications. In these applications, it is often used to control the current flow, prevent losses of power, and provide accurate and efficient power delivery.In summary, the NTTFS5116PLTWG is a field effect transistor designed to handle high input power and large output power. Its single gate design allows it to be used in many applications where only one input signal is required. Its low-on-resistance and high current rating make it ideal for applications that require both high-output current and high-speed switching, making it a popular choice for power management systems, automation, and medical instruments.

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