Allicdata Part #: | NTTFS5820NLTWG-ND |
Manufacturer Part#: |
NTTFS5820NLTWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 37A 8DFN |
More Detail: | N-Channel 60V 11A (Ta), 37A (Tc) 2.7W (Ta), 33W (T... |
DataSheet: | NTTFS5820NLTWG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.7W (Ta), 33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1462pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11.5 mOhm @ 8.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 37A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTTFS5820NLTWG is an advanced semiconductor device typically used for voltage and current regulation, power switching and level shifting applications. This MOSFET is available in various package variations, from TO-220 which is capable of delivering up to 1.5A of current to a TO-247 which can deliver as much as 15A. This device has many advantages over other MOSFETs, such as its low gate charge, low output capacitance and high maximum drain-source voltage.
The NTTFS5820NLTWG has a drain-gate voltage rating of 28V, making it suitable for applications that require high voltages. The gate charge of this MOSFET is also relatively low, which means that this device is able to switch quickly. This is especially useful in applications that require high frequency switching, such as power converters and motor control.
The NTTFS5820NLTWG is a single-gate MOSFET and operates by using the gate voltage to control the flow of current between the source and drain. A small bias voltage is applied to the gate terminal and this voltage is used to control the flow of current by creating a “barrier”. When the applied gate voltage is below the threshold voltage (Vth), no current flows. When the applied gate voltage is greater than Vth, the MOSFET will conduct, allowing current to flow. By adjusting the gate voltage, it is possible to control the amount of current that flows between the source and drain.
This MOSFET is used in a wide range of applications, from AC/DC power converters and DC/DC converters to motor control and power switching. The low gate charge and high maximum drain-source voltage make it an ideal choice for any application where quick switching is required. It is also a suitable choice for level shifters that are used in communication interface circuits. With its versatile applications and good performance characteristics, the NTTFS5820NLTWG is a great choice for any high power applications.
The specific data is subject to PDF, and the above content is for reference
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