NTTFS4823NTWG Allicdata Electronics
Allicdata Part #:

NTTFS4823NTWG-ND

Manufacturer Part#:

NTTFS4823NTWG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 7.1A 8WDFN
More Detail: N-Channel 30V 7.1A (Ta), 50A (Tc) 660mW (Ta), 32.9...
DataSheet: NTTFS4823NTWG datasheetNTTFS4823NTWG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 12V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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NTTFS4823NTWG is a type of FET transistor, more specifically a single-gate MOSFET. It is mainly used in various electronic and communications products, such as smartphones, base stations, routers and more.

In general, FETs, MOSFETs, and single-gate MOSFETs can all be classified as field-effect transistors. They are transistors that rely on an electric field to control the flow of electricity. This type of transistor is made of semiconductor materials, typically silicon-based, and have three terminals. One terminal is the source of the electricity, one is the drain, and one is the gate terminal which controls the flow of electricity. Different types of FETs vary in features such as their gate structure, current-carrying capacity, drain-source breakdown voltage (BSR), and supply voltage depending on their specific application.

NTTFS4823NTWG is a single-gate MOSFET, meaning that it only needs one gate terminal. It is often basic and low-cost, which makes it ideal for low-power electronic applications. Because it doesn’t require a lot of power to operate, it requires fewer components and doesn’t require a large circuit area. In addition, the single gate MOSFET is highly efficient since it can switch from an on to an off state and back again in a relatively short amount of time.

The primary application field for the NTTFS4823NTWG is for low-power electronic applications. Its small size and low power usage make it perfect for devices that need to be as compact and lightweight as possible, as well as for devices that are run on relatively low power sources such as batteries. It is commonly used in radio-frequency transmitters and receivers, and in digital signal processors. It can also be used in audio amplifiers, RF rangers, and other low-power electronics.

The working principle of the NTTFS4823NTWG is based on the idea that when a voltage is applied to the gate terminal, it causes the corresponding current to increase or decrease depending on the type of transistor. In the case of the NTTFS4823NTWG, the current is controlled by the behavior of the electric field. As a single-gate MOSFET, it needs one gate terminal and allows for very basic, low-cost control. It is efficient, reliable, and suitable for low-power applications.

The NTTFS4823NTWG is a versatile and low-cost single-gate MOSFET. It is used in a variety of low-power electronic applications and can switch quickly and easily between on and off states. This makes it ideal for compact devices that need to be as lightweight and efficient as possible. It is based on the principles of electric field control, meaning that when the voltage is applied directly to the gate, it causes the corresponding current to increase or decrease. By using this type of transistor, it is possible to create reliable and efficient designs that use low power, saving on size and costs.

The specific data is subject to PDF, and the above content is for reference

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