NTTFS4840NTWG

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-WDFN (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	840mW (Ta), 27.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	580pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	10.8nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	24 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C:	4.6A (Ta), 26A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The NTTFS4840NTWG is an enhancement mode, N-channel MOSFET transistor, designed for use in a variety of applications. It offers excellent performance, low power, high speed switching, and low-noise operation. The MOSFET transistor is an important component in a variety of electronic circuits, and the NTTFS4840NTWG has been designed to provide superior performance and reliability for applications in high-speed, high-power applications.The NTTFS4840NTWG is a single N-channel MOSFET transistor, and it is used as a switching device in a variety of electronic circuits and systems. This type of transistor is a type of field-effect transistor, and it is composed of two conducting channels, a substrate and a metal gate. This transistor is ideal for applications where high input impedance, low output impedance, low-noise operation, and low-power consumption are required.When an electrical signal is applied to the gate of the MOSFET transistor, the voltage on the gate causes the two conducting channels to be capacitively coupled. This process is called the depletion region, and it creates a voltage differential between the two conducting channels. The larger the voltage applied to the gate, the larger the depletion region. This difference in voltage between the two channels is known as the voltage drop, and it controls the amount of current that is allowed to flow between the two channels. This voltage drop creates a resistive impedance between the two channels, and this is also called the bulk resistance of the MOSFET transistor.The operating principle of the NTTFS4840NTWG is based on the fact that the bulk resistance between the two conducting channels depends on the applied gate voltage. When the gate voltage is increased, the bulk resistance increases, thus reducing the amount of current that can flow through the devices. The NTTFS4840NTWG has been designed with an integrated NMOSFET circuit, and this allows for higher gain and faster switching performance.The NTTFS4840NTWG is designed to be used in a variety of applications, such as in RF/microwave transmitters, receivers, and amplifiers. This device can be used in a variety of applications, including analog voltage regulation, and high speed switching, for example, for switching between analog and digital signals. This device is ideal for high power applications, such as those used in power amplifiers and power converters, due to its ability to switch large amounts of current. Additionally, this device can also be used in a variety of power management designs, as it offers high power efficiency and high integration.In addition to its wide range of applications, the NTTFS4840NTWG is also capable of very low noise operation. This device is designed to provide the highest levels of low-noise performance, which helps to reduce noise in sensitive electronic applications. Additionally, this device offers excellent thermal stability, allowing it to operate in both high temperature and low temperature environments.The NTTFS4840NTWG is an excellent enhancement-mode MOSFET transistor that offers excellent performance, low power consumption, high speed switching, and low-noise operation. This device is ideal for use in high-speed, high-power applications, and offers excellent results in analog video switching and high power amplifiers. Additionally, this device offers excellent thermal stability and low-noise performance, making it an ideal choice for sensitive electronic applications.

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