NTTFS4C08NTWG Allicdata Electronics
Allicdata Part #:

NTTFS4C08NTWG-ND

Manufacturer Part#:

NTTFS4C08NTWG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 52A U8FL
More Detail: N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Sur...
DataSheet: NTTFS4C08NTWG datasheetNTTFS4C08NTWG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 820mW (Ta), 25.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1113pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTTFS4C08NTWG is a high-voltage NeTwork Transistor For Switches used in automotive and industrial environments. It is a low-on-resistance, high-speed MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that provides fast switching and very low on-resistance, which enables a high current-handling capability.

The NTTFS4C08NTWG has a planar vertical double-gate construction, where the top gate is an LDD (Lightly-Doped Drain) device and the bottom gate is a fully-depleted floating body structure. This enables it to have an extremely low gate-drain capacitance, resulting in faster switching speed. It is also fully qualified for the automotive AEC-Q101 standard, making it a suitable choice for automotive applications.

In general, MOSFETs can be divided into two categories: Enhancement-mode and Depletion-mode transistors. The NTTFS4C08NTWG MOSFET belongs to the Enhancement-mode type, which requires a positive voltage to be applied to the gate in order to turn it on. It has an extremely high maximum drain-source breakdown voltage (BVDSS) of 500V and delivers a low on-resistance of only 6.7mΩ, making it well suited for switching applications.

The NTTFS4C08NTWG MOSFET operates according to the following working principle: When a positive voltage (VGS) is applied between the gate and source terminals, the gate-source PN junction is reverse biased, resulting in electrons being attracted to the gate, thus creating a channel between the source and drain. This reduces the resistance between the drain and source terminals, enabling current to flow from the source to the drain. As the voltage applied to the gate is increased, the channel’s width increases. This increases the current-handling capability of the MOSFET, allowing it to handle higher currents.

The NTTFS4C08NTWG MOSFET is ideally suited for switching and power applications such as automotive lighting, motor control, DC/DC converters, and motor drives. It can also be used in other applications such as industrial power supplies, UPS systems, and switching power supplies. Its low on-resistance and high breakdown voltage, make it an ideal choice for automotive and industrial applications, where high reliability and long term stable performance is important.

The specific data is subject to PDF, and the above content is for reference

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