NTTFS4C65NTWG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTTFS4C65NTWG is a power MOSFET device with high power capability, excellent overall performance and low-voltage operation. It is ideal for driving loads that require a large amount of power in a short period of time. It is capable of operating at higher currents and voltages than conventional MOSFETs.

Application Field

NTTFS4C65NTWG devices are commonly used in a variety of applications where power has to be managed efficiently, such as high power relay drivers, DC-DC converters, low voltage switch mode power supplies, and high power motor drives. They are suitable for applications such as those in the automotive, industrial and consumer electronics markets. They are also used in LED lighting applications where large currents may be switched quickly.

Working Principle

NTTFS4C65NTWG power MOSFETs are n-channel depletion-mode transistors with a floating gate. A voltage applied to the gate causes the channel to become conductive, allowing current to flow through the drain–source connection. MOSFETs are voltage-driven and current operated, meaning that their drain current depends on the gate–source voltage. This makes them well suited for high-power applications.

Typically, a power MOSFET is switched off at a predefined gate voltage and becomes fully on at either 0 V or a slightly higher voltage (VGS(th), the threshold voltage). The on-resistance at VGS(th) is also relatively low, making it ideal for switching high-power loads.

Since they are voltage-driven, power MOSFETs offer several advantages over other types of power transistors. They typically have higher efficiency, lower voltage drop and lower switching losses, allowing them to operate at higher frequencies. They also have fast switching times and can handle high-current pulses.

In addition, power MOSFETs are available in a variety of packages, such as TO-220, TO-251 and D-pak, which make them well suited for high-power applications.

The specific data is subject to PDF, and the above content is for reference