Allicdata Part #: | NTTFS4H07NTAG-ND |
Manufacturer Part#: |
NTTFS4H07NTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 18.5A U8FL |
More Detail: | N-Channel 25V 18.5A (Ta), 66A (Tc) 2.64W (Ta), 33.... |
DataSheet: | NTTFS4H07NTAG Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 18.5A (Ta), 66A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12.4nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 771pF @ 12V |
FET Feature: | -- |
Power Dissipation (Max): | 2.64W (Ta), 33.8W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Package / Case: | 8-PowerWDFN |
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The NTTFS4H07NTAG is a Next Generation input Trench Field Stopper FET designed to control load in next generation digital amplifiers and other applications. The device is a single N-channel Enhancement Mode FET. It is designed to improve efficiency, reduce losses and increase load capacity while maintaining sound quality. It features an on-chip Metal Oxide Semiconductor FET (MOSFET) built on a specially engineered Next Generation Trench Field Stopper (NFET) Structure for high performance.
In operation, the device works by providing a low resistance path between the Gate and the Source. This allows current to flow from the Gate to the Source and thus control the level of the signal being amplified. The NFET is designed to provide an optimized signal path, reducing signal reflection and losses, thereby improving efficiency. As a result, the device is capable of providing higher power output and better sound quality.
The NTTFS4H07NTAG device is versatile, as it can be used for boosting, limiting, and distortion control in a wide variety of applications. It has been designed for use in Class D amplifiers, but can also be used in other applications, including audio equalisers, signal processing, RF amplifiers, and audio effects. It is a robust device that can handle a wide range of load and temperature conditions.
In addition, the NTTFS4H07NTAG has a low on-state resistance (RON), allowing it to reduce losses and increase efficiency. The device also features a low gate threshold voltage (VTG), enabling it to switch quickly and accurately, while still providing a high degree of control over the signal. The device also boasts a low input capacitance, ensuring fast response and reduced switching distortion.
In summary, the NTTFS4H07NTAG is a versatile, high performance single N-channel Enhancement Mode FET, designed for use in a variety of applications. It features an on-chip Metal Oxide Semiconductor FET and a Next Generation Trench Field Stopper Structure for higher efficiency and improved sound quality. It has a low on-state resistance, low gate threshold voltage and low input capacitance, enabling it to switch quickly and accurately while providing a high degree of control over the signal. The device is designed to provide improved efficiency, reduce losses and increase load capacity while maintaining sound quality.
The specific data is subject to PDF, and the above content is for reference
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