| Allicdata Part #: | NTTFS4H07NTWG-ND |
| Manufacturer Part#: |
NTTFS4H07NTWG |
| Price: | $ 0.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 18.5A U8FL |
| More Detail: | N-Channel 25V 18.5A (Ta), 66A (Tc) 2.64W (Ta), 33.... |
| DataSheet: |  NTTFS4H07NTWG Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.47093 |
| Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-WDFN (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 2.64W (Ta), 33.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 771pF @ 12V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12.4nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18.5A (Ta), 66A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Introduction
The NTTFS4H07NTWG is a P-channel TrenchFET® Extra Heavy-Duty Power MOSFET produced by ON Semiconductor. This type of transistor is also known as a “Field Effect Transistor” (FET) and is a particular type of solid-state electronic device that has two terminals that provide a voltage and current control mechanism. In the case of the NTTFS4H07NTWG, the device is a single, P-channel, vertical MOSFET with an on-resistance between 10.5mΩ and 13.25mΩ.
Application Field
The NTTFS4H07NTWG has a maximum drain current of 40A which makes it suitable for high-accuracy, cost-effective DC-to-DC conversion applications. Its maximum voltage rating of 30V makes it ideal for use in low voltage, portable devices such as notebooks, tablets, and smartphones. It is also suited for use in a wide variety of other applications including low noise amplifiers, auxiliary power supplies, AC/DC voltage sources, and many industrial and automotive applications.
Working Principle
The working principle of the NTTFS4H07NTWG is based on the field-effect mechanism which is the basic principle behind all FETs. The power MOSFET consists of two layers of silicon semiconductor material. The first layer, known as the “p-type” layer, is the source of electrons. When a voltage is applied between the source and the drain, it causes a current to flow through the device. This current flow then creates a field between the source and the drain which affects the behavior of the second layer, known as the “n-type” layer. By carefully controlling the voltage, current, and gate-to-source capacitance, the MOSFET can be used as an efficient amplifier or into high-speed switching circuits.
Conclusion
The NTTFS4H07NTWG is a single, P-channel TrenchFET® Extra Heavy-Duty Power MOSFET produced by ON Semiconductor. It has a maximum drain current of 40A, making it suitable for high-accuracy, cost-effective DC-to-DC conversion applications. Its maximum voltage rating of 30V is perfect for low voltage, portable devices. The NTTFS4H07NTWG works using the field-effect mechanism in which the current flow through the device creates a field between the source and the drain which is used to control the behavior of the n-type layer.
The specific data is subject to PDF, and the above content is for reference
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