PTFB091507FH-V1-R0

The PTFB091507FH-V1-R0 is a 6 pin, 15 GHz FET type Metal Oxide Semi-Conductor Field Effect Transistor (MOSFET), designed for use in high frequency, micropower amplifiers, such as communications systems and broadband signal processing. It is suitable for amplifying low-level signal sources in application fields that require both low power and wide bandwidth, such as radio frequency (RF), imaging and optical systems.

In terms of its basic functionality, the PTFB091507FH-V1-R0 belongs to a group of MOSFETs, known as Enhancement-mode MOSFETs, which are used as switches to control circuits. This requires supplying a gate bias voltage to be switched ‘on’ and ‘off’ or controlling its current flow by changing the gate voltage.

The PTFB091507FH-V1-R0’s gate length is fabricated using a high-performance planar structure that incorporates ultra-thin gate oxide for superior on-state performance and improved RF power handling capability. It can operate as a small signal amplifier in linear and digital devices and provides high-speed switching in high-power applications. It is also suitable for driving high-speed switching transistors, such as GaAs devices and MOSFETs.

The PTFB091507FH-V1-R0 is designed to effectively amplify a wide range of input signals. The operational frequency range of the PTFB091507FH-V1-R0 is from dc to 15 GHz, allowing for high-performance signal processing for a range of applications, including broadcast and communications systems. The device is also designed for low noise and low distortion amplification.

In terms of its physical design, the PTFB091507FH-V1-R0 incorporates a monolithic HEMT structure with a single gate connection and a drain and source connection. This structure enables the PTFB091507FH-V1-R0 to provide high frequency handling performance and low power operation. It also typically operates with a gate-source voltage (Vgs) of 5 volts and a drain current (Id) of 17mA.

The PTFB091507FH-V1-R0 has an input impedance of typically 30-200Ω at 3GHz, making it suitable for RF circuits, such as radio receivers and transmitters. It exhibits low drain-source resistance (Rds) and very low input capacitance (Cis), which allows for easy handling at high frequencies. It also provides a low distortion when driving high-power loads, making it ideal for controlling high-power systems.

In summary, the PTFB091507FH-V1-R0 is a versatile and high-performance MOSFET designed for use in high frequency and low power applications. It offers a wide range of frequency and power handling capabilities, making it suitable for driving various types of high-power loads. Its monolithic structure also enables low distortion and low noise amplification.