Allicdata Part #: | PTFB182503EL-V1-R0-ND |
Manufacturer Part#: |
PTFB182503EL-V1-R0 |
Price: | $ 75.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS H-33288-6 |
More Detail: | RF Mosfet LDMOS 30V 1.85A 1.88GHz 19dB 50W H-33288... |
DataSheet: | PTFB182503EL-V1-R0 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 68.84200 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Not For New Designs |
Transistor Type: | LDMOS |
Frequency: | 1.88GHz |
Gain: | 19dB |
Voltage - Test: | 30V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.85A |
Power - Output: | 50W |
Voltage - Rated: | 65V |
Package / Case: | H-33288-6 |
Supplier Device Package: | H-33288-6 |
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?The PTFB182503EL-V1-R0 is a type of FET (Field Effect Transistor) in the family of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) dedicated to work as an RF (Radio Frequency) switch. Its application is widely used in Radio Communications, UHF/VHF telemeters, UHF receiver modules, and many other RF applications. Its main feature is a low loss performance, as it is capable of sustaining frequencies up to 4 GHz.
A basic understanding of a FET is necessary to understand the PTFB182503EL-V1-R0. In electronics, a transistor is a basic semiconductor device having three electrodes where the electric current or power flowing through it is controlled by a third electrode. The FET has a unique construction; it has four electrodes or terminals, in which two of them act as source (S) and drain (D), and are separated by a channel. The other two terminals are referred to as the gate (G). Controlling the voltage applied to the gate, controls the current flowing between the source and the drain terminals. In a FET, the current flow is directly proportional to the gate-to-source voltage, and the FET acts as a variable resistor in which the resistance between its two electrodes is variable depending on the voltage applied to the gate.
The PTFB182503EL-V1-R0 is a type of MOSFET switch which uses this principle to make switching decisions based on external control signals. It is constructed in a dual-gate configuration, and each of its gates is connected to its respective control signals. This provides the PTFB182503EL-V1-R0 with the ability to switch signals between different nodes in a circuit. The PTFB182503EL-V1-R0 is also capable of withstanding very high voltages and power levels, making it ideal for low-loss RF applications.
The PTFB182503EL-V1-R0 is a great device for anyone looking for a reliable, low-power RF switch for their circuits. It performs significantly better than traditional field effect transistors, and its low loss performance offers increased reliability and precision in terms of controlling signals. With its wide range of applications in radio communications, UHF/VHF telemeters, and UHF receiver modules, the PTFB182503EL-V1-R0 is a great choice for anyone looking for a reliable RF switch.
The specific data is subject to PDF, and the above content is for reference
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