Allicdata Part #: | PTFB211501FV1R250XTMA1TR-ND |
Manufacturer Part#: |
PTFB211501FV1R250XTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | FET RF 65V 2.17GHZ H37248-2 |
More Detail: | RF Mosfet LDMOS 30V 1.2A 2.17GHz 18dB 40W H-37248-... |
DataSheet: | PTFB211501FV1R250XTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.17GHz |
Gain: | 18dB |
Voltage - Test: | 30V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.2A |
Power - Output: | 40W |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads, Flanged |
Supplier Device Package: | H-37248-2 |
Base Part Number: | PTFB211501 |
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PTFB211501FV1R250XTMA1 is a family of high frequency, power field-effect transistors (FETs) manufactured by Texas Instruments. It is an N-channel FET designed for industrial and commercial applications in the radio frequency (RF) band. Specifically, the PTFB211501FV1R250XTMA1 is designed for very high frequency operation between 25 and 250 GHz.
The two most important features of the PTFB211501FV1R250XTMA1 are its low noise figure of 0.9dB, and its high power output of 30W. This makes the PTFB211501FV1R250XTMA1 ideal for applications such as base stations, point-to-point transmitters, and other radio communication systems requiring very high frequency, low noise, and high power output. The PTFB211501FV1R250XTMA1 also features a low turn-on capacitance of 3.2 pF, which makes it suitable for use in high frequency switching circuits.
The PTFB211501FV1R250XTMA1 is a metal-oxide-semiconductor field-effect transistor (MOSFET). As with other MOSFETs, the PTFB211501FV1R250XTMA1 works by controlling the voltage on the gate to control the electronic field between the source and drain of the device. The metal oxide layer acts as a capacitor and allows electrons to flow between the source and drain when the gate voltage is applied. This creates a voltage differential across the device, which can then be used to control the current flow flowing between the source and drain.
The PTFB211501FV1R250XTMA1 is designed to operate in the 25-250 GHz range, providing excellent performance and reliability. It is capable of delivering up to 30W of power, which makes it suitable for applications such as point-to-point transmitters and other radio communication systems requiring very high frequency, low noise, and high power output. It also features a low noise figure of 0.9dB and a low turn-on capacitance of 3.2 pF, making it suitable for use in high frequency switching circuits.
In summary, the PTFB211501FV1R250XTMA1 is an ideal choice for high frequency, power FET applications in the radio frequency (RF) band. It features excellent performance and reliability, low noise figure of 0.9dB, and high power output of 30W. It also features a low turn-on capacitance of 3.2 pF, making it suitable for use in high frequency switching circuits. This makes the PTFB211501FV1R250XTMA1 ideal for applications such as base stations, point-to-point transmitters, and other radio communication systems requiring very high frequency, low noise, and high power output.
The specific data is subject to PDF, and the above content is for reference
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