PTFB211503EL-V1-R0

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PTFB211503EL-V1-R0 is an enhancement-mode radio frequency (RF) power field-effect transistor (FET) from NXP. It is designed for high-power amplifiers for commercial wireless applications in cellular, submarine and military RF communications. The product features high gain-bandwidth, low noise figure, and excellent linearity, with standards that meet or exceed the requirements of various commercial wireless infrastructure standards.

The PTFB211503EL-V1-R0 is designed for use in high-power applications and is configured as an Enhancement-mode FET. This means that the output voltage is higher than the input voltage and the switch turns on when a low voltage is applied to the control electrode. This device is intended to be used in applications requiring high power output, such as RF amplifiers, high-power pulsed amplifiers, and linear amplifiers.

The PTFB211503EL-V1-R0 has a maximum drain bias voltage of 28V and a maximum current rating of 2A. The device has a maximum power dissipation rating of 22W and a maximum total gain of 21.5 dB. The mathematical model of the PTFB211503EL-V1-R0 can be used to simulate the electrical performance of the transistor in various load conditions.

The PTFB211503EL-V1-R0 is a versatile device that is suitable for various applications, including automotive, wireless communications, avionics, and medical. It provides very good thermal stability and high speed operation. The device also features a low noise figure of less than 1 dB and a high gain-bandwidth product of 30 MHz. This makes the PTFB211503EL-V1-R0 an ideal choice for high-performance RF amplifiers and linear power amplifiers.

In order to operate the PTFB211503EL-V1-R0 correctly, the user must ensure that it is installed correctly and is operated within the recommended specifications. The device should be properly grounded or decoupled in order to reduce any possibility of interference or other problems. It is also important to ensure that the device is operated within its absolute maximum ratings, which can be found in the data sheet. If any of these conditions are not met, the device may become damaged or produce unsatisfactory performance.

In conclusion, the PTFB211503EL-V1-R0 is an enhancement-mode radio frequency (RF) power field-effect transistor (FET) from NXP designed for high-power amplifiers for commercial wireless applications in cellular, submarine and military RF communications. It features high gain-bandwidth, low noise figure, and excellent linearity, with standards that meet or exceed the requirements of various commercial wireless infrastructure standards.

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