PTFB211803FLV2R250XTMA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.17GHz
Gain:	17.5dB
Voltage - Test:	30V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.3A
Power - Output:	40W
Voltage - Rated:	65V
Package / Case:	2-Flatpack, Fin Leads, Flanged
Supplier Device Package:	H-34288-4/2

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PTFB211803FLV2R250XTMA1 is a depletion mode enhancement-type field-effect transistor (FET). It was designed for the use in ultra-high frequency (UHF) applications with a broad frequency range of 0.5 - 6GHz and power ratings up to 5W. It is well suited for operation with speedy switching at high frequency in RF transmitters, receivers, and transceivers.It is a lateral double-diffused MOS (LDMOS) transistor with a low drain-source resistance and high thermal dissipation of up to 2.5mΩ and 0.3°C/W, respectively. This makes it an efficient choice for applications that demand high power handling capabilities. Moreover, its low on-resistance allows it to reduce the amount of power lost as heat, and its high low-resistance drain-source junction offers a better device reliability.The PTFB211803FLV2R250XTMA1 is capable of operating in a broad input power range of -18dBm to +5dBm with a low gate to source capacitance of 0.5pF. Furthermore, it offers as low as 10nA of drain current even at high gate voltage while remaining within its temperature range. This helps to minimize signal distortion, improve signal-to-noise ratio, increase the power efficiency and eventually maximize the range of an antenna. The PTFB211803FLV2R250XTMA1 has a high input impedance which allows it to connect with an external high-frequency transmitter or a receiver without incurring signal loss or degradation. This makes it highly suitable for use in applications such as wireless communication, satellite communications and digital video broadcast (DVB).In addition to its wide frequency range, the transistor also has a wide drain-source voltage range. This makes it suitable for use in applications that demand either low-or high-voltage linearity. Its large drain junction and optimized flange-bond layout make it ideal for high-power, high-efficiency linear applications, such as radio frequency communication. Its additional advantages include its soft breakdown feature, which allows it to tolerate input voltages up to 25 volts.The PTFB211803FLV2R250XTMA1 employs high-frequency amplifying and switching capabilities to achieve signal control. This is done by controlling the direction of an electric field that flows between its gate and source, allowing it to alter its conductance. By changing the electric field, it can alter the flow between the drain and source. Thus, the transistor can be employed to realize the amplification, attenuation, and switching of signals from 0.5-6GHz.In conclusion, the PTFB211803FLV2R250XTMA1 offers a comprehensive solution for UHF applications, owing to its broad frequency range, exceptional power handling capabilities, low on-resistance, and high thermal dissipation. It is an ideal choice for high-frequency switches, amplifiers, and transceivers in applications such as wireless communication, satellite communication, and digital video broadcast (DVB).

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