Allicdata Part #: | R6024ENZC8-ND |
Manufacturer Part#: |
R6024ENZC8 |
Price: | $ 3.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 24A TO3PF |
More Detail: | N-Channel 600V 24A (Tc) 120W (Tc) Through Hole TO-... |
DataSheet: | R6024ENZC8 Datasheet/PDF |
Quantity: | 28 |
1 +: | $ 2.79720 |
10 +: | $ 2.49984 |
100 +: | $ 2.04964 |
500 +: | $ 1.65969 |
1000 +: | $ 1.39973 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-3P-3 Full Pack |
Supplier Device Package: | TO-3PF |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 11.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The R6024ENZC8 is an n-channel Metal-Oxide Semiconductor Field-effect Transistor (MOSFET). This component integrates advanced semiconductor technology, allowing it to achieve high frequency and low on-resistance performance. It is part of Vishay’s discrete MOSFET product line, offering highly reliable, efficient, and cost-effective solutions for various industries.
A MOSFET is an active solid-state device that is used as a switch in various electronic circuits. It is composed of a source, a gate, and a drain, which are made of either p-type or n-type materials. The source and drain are connected to each other and the gate is insulated from the channel. When a small voltage is applied to the gate, this voltage can be amplified, resulting in a much larger voltage that can then be used to drive a current in the channel.
The R6024ENZC8 is an n-channel MOSFET designed for use in applications such as motor control, power conversion, signal processing, and lighting. This component is capable of operating up to a maximum voltage of 60V, with a drain current rating of 20A and a typical on-resistance of 240 mOhms. It features a Fast Switching Performance, Low Input Capacitance, and Low Threshold Gate Voltage.
The R6024ENZC8 operates on the principle of the MOSFET. When the small voltage applied to the gate is increased, an electric field is generated by the gate-source junction, resulting in a decrease in the resistance between the drain and the source terminals. This allows current to flow from the source to the drain, thereby activating the transistor’s switch. The continuous drain current rating and typical on-resistance of this MOSFET allows it to be used in applications requiring high-speed switching as well as low on-resistance.
The R6024ENZC8 is ideal for use in various automotive, industrial, and consumer electronics applications. It can be used to control DC motors and power supplies, to provide protection against over-currents and over-voltages, and to regulate the power flow in various circuits. Its low on-resistance and fast switching performance make it ideal for use in lighting control systems and signal processing. In addition, it can be used in battery management, gate driver circuits, and power conversion systems.
The R6024ENZC8 MOSFET is an efficient and reliable component, designed to provide excellent performance in a wide variety of applications. Its high frequency and low on-resistance characteristics make it an ideal choice for high-power switching, motor control, and power conversion. Its low input capacitance and fast switching performance are ideal for applications requiring high-speed operation. This component offers a cost-effective solution for automotive, industrial, and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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