Allicdata Part #: | R6020ANX-ND |
Manufacturer Part#: |
R6020ANX |
Price: | $ 5.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 20A TO-220FM |
More Detail: | N-Channel 600V 20A (Ta) 50W (Tc) Through Hole TO-2... |
DataSheet: | R6020ANX Datasheet/PDF |
Quantity: | 950 |
1 +: | $ 4.90770 |
10 +: | $ 4.38354 |
100 +: | $ 3.59428 |
500 +: | $ 2.91046 |
1000 +: | $ 2.45461 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2040pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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The R6020ANX is an enhancement mode, N-channel Field Effect Transistor (FET) device with low source-drain ON-state resistance and fast switching characteristics. This device can be used in a variety of high speed, low power applications, as well as for switching and power supplies. R6020ANX FETs are designed for pulse width modulation (PWM) control, low input gate current, and low threshold voltage. It is suitable for linear and digital applications.
The R6020ANX FET has an insulated gate, which is a three-terminal device. The gate can be positively or negatively charged, which creates an electrostatic field between the gate and the source-drain regions. The insulation ensures isolation from the outside environment and enables the gate to control the flow of charge carriers from the source to the drain. Charging and discharging the gate controls the flow of electrons from the source to the drain, thus turning the device ON or OFF.
The R6020ANX is compatible with many voltage levels up to 65V. It has a low threshold voltage, which enables it to turn on faster when the gate voltage is above the threshold and turn off faster when the gate voltage is less than the threshold. The device also has a relatively low on-state resistance, making it highly efficient in low-power applications.
The R6020ANX is ideal for applications that require high switching speed and low power dissipation. It is well suited for use in AC/DC converters, DC-DC converters, PWM controllers and switching power supplies, as well as in linear and digital applications. It is also suitable for applications such as hard disk drive preamps, data acquisition, industrial control systems, and power supplies.
The R6020ANX FET is a reliable and efficient component that can be used in a wide variety of switch mode power supply and digital applications. It is designed for low input gate current, low threshold voltage and low on-state resistance. It is suitable for applications that require high switching speed and low power dissipation, such as AC/DC converters, DC-DC converters, PWM controllers and switching power supplies, and linear and digital applications.
The specific data is subject to PDF, and the above content is for reference
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