R6024ENJTL Discrete Semiconductor Products |
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Allicdata Part #: | R6024ENJTLTR-ND |
Manufacturer Part#: |
R6024ENJTL |
Price: | $ 1.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 24A LPT |
More Detail: | N-Channel 600V 24A (Tc) 40W (Tc) Surface Mount LPT... |
DataSheet: | R6024ENJTL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.20702 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | LPTS (D2PAK) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 11.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The R6024ENJTL is a versatile, single-gate FET designed for a wide array of applications. This FET is ideal for use in low voltage and high current conditions, and it features a low input capacitance, fast switching speed and low on-state resistance. It is available in through-hole and surface mount packages, making it suitable for many applications. The R6024ENJTL is commonly used in power conversion, motor control, and many other integrated circuit applications.
The R6024ENJTL device is a metal-oxide-semiconductor field-effect transistor (MOSFET) with a single-gate connection. This type of device is also referred to as an insulated gate bipolar transistor (IGBT), which is a variation on the standard MOSFET design. In contrast to traditional MOSFETs, IGBT devices include an additional insulated gate, allowing for the control of both voltage and current.
The working principle of the R6024ENJTL is quite simple. The device is constructed in such a way that an electrical charge is applied to the gate of the device, causing it to increase the conductivity through the channel between the source and drain. The amount of current that can flow through the channel is determined by the amount of charge that is provided to the gate, allowing for the control of the current.
The R6024ENJTL has a wide range of applications, from automotive to industrial applications. In automotive applications, it can be used for power conversion, motor control, lighting control and other related applications. In industrial applications, it is often used as a switch in circuits, allowing for the control of currents in a reliable and cost-effective manner.
The R6024ENJTL device is well suited for use in many low voltage and high current applications, due to its low input capacitance, fast switching speed and low on-state resistance. This makes it an ideal choice for a wide range of applications where power efficiency and reliability are of the utmost importance.
In conclusion, the R6024ENJTL is a versatile, single-gate FET that is suitable for a variety of applications. It features a low input capacitance, fast switching speed and low on-state resistance, making it an ideal choice for power conversion, motor control and many other industrial applications.
The specific data is subject to PDF, and the above content is for reference
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