Allicdata Part #: | R6024KNZ1C9-ND |
Manufacturer Part#: |
R6024KNZ1C9 |
Price: | $ 2.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CHANNEL 600V 24A TO247 |
More Detail: | N-Channel 600V 24A (Tc) 245W (Tc) Through Hole TO-... |
DataSheet: | R6024KNZ1C9 Datasheet/PDF |
Quantity: | 409 |
1 +: | $ 2.49480 |
10 +: | $ 2.22768 |
100 +: | $ 1.82681 |
500 +: | $ 1.47929 |
1000 +: | $ 1.24759 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 245W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 165 mOhm @ 11.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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R6024KNZ1C9 is a kind of n-channel enhancement-mode power field effect transistor, which can be classified into the ‘transistors - FETs, MOSFETs - Single’ category. This type of transistor works in three different mode, which are enhancement, depletion and saturation. It is made up of a source and a drain electrode, as well as a gate that is electrically isolated from the other two. R6024KNZ1C9s are typically used in power switching and are characterized by their low on-stateresistance and fast switching speed.
In an R6024KNZ1C9, electrons are the majority charge carriers, and when a negative voltage is applied at the gate of the device, the electric field will affect the region near the gate, resulting in an inversion layer at the surface. This allows electrons to flow from the source to the drain and the device shifts from its normally off state to an on state, which allows current flow. On the other hand, when the right voltage is applied at the gate, the inversion region will disappear and the transistor will turn off, disconnecting the electronsflow and current flow in the device. This allows the transistor to work as a switch, able to turn current on and off depending on the gate voltage.
In terms of its application field, R6024KNZ1C9 transistors are typically used in power switching applications such as in motor control, power supplies, lighting control and other power switching applications. Because of its low on-state resistance and fast switching times, it can be used as a switch in these applications to control the flow of current. Samsung’s R6024KNZ1C9 transistors have a low on-state resistance of 0.01 ohm max and a fast switching time of 20 ns.
The working principle of R6024KNZ1C9 transistors is based on the behaviour of electrons and electric fields, as mentioned above. When the voltage at its gate drops below the threshold voltage, a depletion layer will be created, allowing electrons to flow from source to drain and turning the device on. When the gate voltage rises above the threshold voltage, the electric field will be removed, the depletion layer will be eliminated and the device will be off.
In conclusion, R6024KNZ1C9 transistors are a kind of n-channel enhancement-mode power field effect transistor that are used in power switching applications due to their lowon-state resistance and fast switching speed. It works by creating a depletion layer when the gate voltage drops below the threshold voltage, allowing electrons to flow from the source to the drain and turning the device on. Its working principle is based on the behaviour of electric fields and electrons.
The specific data is subject to PDF, and the above content is for reference
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