RJK0328DPB-01#J0 Discrete Semiconductor Products |
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Allicdata Part #: | RJK0328DPB-01#J0TR-ND |
Manufacturer Part#: |
RJK0328DPB-01#J0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 30V 60A LFPAK |
More Detail: | N-Channel 30V 60A (Ta) 65W (Tc) Surface Mount LFPA... |
DataSheet: | RJK0328DPB-01#J0 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6380pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.1 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RJK0328DPB-01#J0 devices are among the most commonly used field effect transistors (FET), commonly referred to as MOSFETs. A field effect transistor (FET) is an unipolar semiconductor device that uses only one type of mobile charge carrier, which is usually an electron or a ‘hole’. The RJK0328DPB-01#J0 MOSFET is a single, N-channel FET device designed for general use, with both a wide-range gate threshold voltage range and a low on-state resistance. It is capable of handling a drain current up to 32A and can operate at frequencies up to 2GHz.
RJK0328DPB-01#J0 MOSFETs can be used in a wide variety of applications, from digital logic circuits to DC motor control, and from low-power audio amplifiers to RF transceivers. They are particularly suitable for power control applications, as they are capable of switching very large currents with very low losses. Their low on-state resistance also makes them well suited for high-efficiency power conversion systems. They can also be used for switching high voltage circuits, up to the drain source breakdown voltage of 55V.
The working principle of a MOSFET is based on the charge movement between the drain, gate and source terminals. The gate of a MOSFET can be thought of as a capacitor, where when a voltage is applied to the gate terminal, it stores an electrical charge and creates an inverted electric field on the drain terminal, causing the current flow through the device to be blocked. When the voltage on the gate terminal is removed, the electrical charge is dissipated, causing the electric field on the drain terminal to be removed and allowing the current to flow freely. This is how the current flows through the device can be controlled.
RJK0328DPB-01#J0 MOSFETs are designed to provide both high efficiency and low power dissipation, as well as high switching speed. Their wide range of gate threshold voltages and low on-state resistance also allow for some creative design possibilities. They are used in a variety of applications, from motor control to RF transceivers, and are particularly well suited for power conversion and control applications.
The specific data is subject to PDF, and the above content is for reference
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