RJK0355DSP-00#J0 Allicdata Electronics
Allicdata Part #:

RJK0355DSP-00#J0TR-ND

Manufacturer Part#:

RJK0355DSP-00#J0

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 30V 12A 8-SOP
More Detail: N-Channel 30V 12A (Ta) 1.8W (Ta) Surface Mount 8-S...
DataSheet: RJK0355DSP-00#J0 datasheetRJK0355DSP-00#J0 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

RJK0355DSP-00#J0 is categorized as a single MOSFET (metal-oxide-semiconductor field effect transistor) device. This type of transistor is widely used in various applications due to its low cost, simple design, and high performance. It is also used as a switch or amplifier in many circuits and comes in a variety of packages. Its primary application fields are those related to power and protection. In order to better understand the working principle of RJK0355DSP-00#J0, it is important to start with an overview of what MOSFETs are and how they operate.

MOSFET Working Principle

MOSFET devices are composed of four layers of semiconductor material. The gate, drain, and source terminals are made of metal and the remaining layers consist of an oxide insulating layer, an N-type semiconductor substrate, and a P-type semiconductor substrate. These four layers of semiconductor materials are linked together and form an electrical pathway between the three terminals, allowing current to flow through the circuit. When voltage is applied to the gate terminal, the N-type substrate is attracted to the gate terminal, setting up an electric field which allows current to flow through the circuit. By manipulating the voltage at the gate terminal, the flow of current through the MOSFET device can be controlled.

Applications

One primary application of RJK0355DSP-00#J0 is in power supply circuits. Due to its robust design, it can be used to effectively control the current flow to different parts of the circuit. It is also used to switch on and off devices within the circuit or to regulate its output power. The low power dissipation of the RJK0355DSP-00#J0 makes it a good choice for controlling power in mobile devices or laptop computers. It can also be used to amplify signals in other circuits, such as those found in audio amplifiers.

Protection

Another common application of RJK0355DSP-00#J0 is for protection. As it can be used to regulate the amount of current flowing through the circuit, it can also be used to protect other components from damage caused by an overload of current. The device also has a low voltage threshold, which means it can be used to protect against voltage spikes. The low threshold also allows it to switch on at a much lower voltage than other MOSFET devices.

Conclusion

RJK0355DSP-00#J0 is a single MOSFET device that is used for both power control and protective purposes. By controlling the flow of current to various parts of the circuit, it can be used to power devices and to protect other components from damage caused by surges. It is a robust and reliable device that is well suited for use in power supply circuits, audio amplifiers, and protection circuits.

The specific data is subject to PDF, and the above content is for reference

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