RJK0332DPB-01#J0 Discrete Semiconductor Products |
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Allicdata Part #: | RJK0332DPB-01#J0TR-ND |
Manufacturer Part#: |
RJK0332DPB-01#J0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 30V 35A LFPAK |
More Detail: | N-Channel 30V 35A (Ta) 45W (Tc) Surface Mount LFPA... |
DataSheet: | RJK0332DPB-01#J0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2180pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 17.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RJK0332DPB-01#J0 is a high-current pulse width modulation (PWM) FET with a load current of up to 125A, and a current sense threshold of 6.25A. It is ideally suited for controlling the voltage across a large DC motor, or for controlling a high powered amplifier. The device also responds well to a DC input signal when used for analog control applications. It is an ideal choice for a variety of high power applications such as industrial equipment, automotive electronics, and home theater systems.
One attractive feature of the RJK0332DPB-01#J0 is its high switching speed, with a turn-off time of only 15ns and a turn-on time of only 25ns. This makes it possible to very quickly respond to changes in the input signal, allowing for precise control of the load. The device also offers low input capacitance and low output capacitance, making it well suited to high power applications that require high switching speeds.
The RJK0332DPB-01#J0 features a single-channel, depletion-mode enhancement-mode MOSFET structure, wherein the gate source and drain source are connected in series. This arrangement allows for a high input resistance, meaning that the device can be driven with a low voltage source without compromising performance. The low input capacitance ensures low noise operation while the low output capacitance ensures fast switching times. Additionally, the device offers excellent thermal stability, allowing it to handle high power levels without overheating.
The working principle of the RJK0332DPB-01#J0 is based on the principle of capacitive coupling between the gate, source, and drain electrodes. When a voltage applied to the gate electrode exceeds the threshold voltage of the depletion region, electrons in the source and drain regions are quickly transferred to the gate region. This creates an inversion layer, which then enables a strong electric field to form between the source and the drain. As current passes through this field, it is either blocked or allowed to flow, depending on the voltage applied to the gate. By controlling the gate voltage, the amount of current that passes through the field can be controlled, thus allowing the load to be controlled in a precise and consistent manner.
The RJK0332DPB-01#J0 is an ideal choice for high current pulse width modulation applications such as controlling a DC motor, or for controlling a high powered audio amplifier. Its high switching speed, low input and output capacitance, and excellent thermal stability make it well suited to demanding applications. As such, the RJK0332DPB-01#J0 is ideal for a wide variety of high power applications.
The specific data is subject to PDF, and the above content is for reference
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