RJK0454DPB-00#J5 Discrete Semiconductor Products |
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Allicdata Part #: | RJK0454DPB-00#J5TR-ND |
Manufacturer Part#: |
RJK0454DPB-00#J5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 40V 40A LFPAK |
More Detail: | N-Channel 40V 40A (Ta) 55W (Tc) Surface Mount LFPA... |
DataSheet: | RJK0454DPB-00#J5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The RJK0454DPB-00#J5 is a high-density power. MOSFET that is designed to meet the requirements of portable electronic devices customers. It is commonly used in a wide range of applications, ranging from low-side switches, DC-DC and low voltage control applications, to high-side power switches, current sensing, and robotic actuators. The RJK0454DPB-00#J5 is a member of the RJK0454 family of field Effect Transistor (FET) products.
The RJK0454DPB-00#J5 is a single N-channel enhancement-mode, MOSFET device. It is designed as a high-density, low-directional, single-power MOSFET suitable for low-side switches, DC-DC and low voltage control applications. The device is capable of operating at very low input voltages and can switch up to 45V DC and 50V AC.
The RJK0454DPB-00#J5 works by controlling the flow of current through the metal-oxide semiconductor or MOS, which consists of an insulated gate controlling a conductive channel (hence the name, MOSFET). The control of the gate-to-source voltage (V GS ), which is different from the drain voltage (V DS ), determines whether the MOSFET is in cutoff, linear or saturation mode. Depending on the application, the device can be operated in a variety of configurations such as single-ended, common-source, common-drain and cascode.
In single-ended configuration, the gate of the MOSFET is driven by a current source, and the device is used as a switching device for applications such as low-side power switches. In common-source configuration, the gate is driven by a voltage source, and the device can be used for current sensing, DC-DC converters, and robotic actuators. In common-drain configuration, the device is connected in series with a second device and can be used for high-side switched applications.
When used in cascode mode, the device is connected to an additional device, usually an NPN transistor, allowing it to switch higher voltages. The cascode mode also offers improved immunity to noise. The MOSFET can also be operated in depletion mode, which is a less common but highly useful state for controlling much higher voltages.
The RJK0454DPB-00#J5 is a power MOSFET with a wide range of applications. It is designed to meet the requirements of portable electronic devices customers. Its low input voltage and high operating voltage capability make it suitable for a variety of applications, including low-side switches, DC-DC and low voltage control, high-side power switches, current sensing, and robotic actuators. The device can be operated in various configurations, including single-ended, common-source, common-drain and cascode.
The specific data is subject to PDF, and the above content is for reference
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