RJK0391DPA-00#J5A Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-WPAK (3)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5600pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	2.9 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	50A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The RJK0391DPA-00#J5A is a high power, N-Ch Enhanced Power MOSFET transistor, that features a very low on-resistance in a small package. This device is ideal for applications in high-current, high-speed switching applications.The RJK0391DPA-00#J5A device offers a wide range of features and benefits that make it an ideal choice for many applications. Its very low on-resistance and high surge current capabilities make it suitable for applications that require fast switching with minimal power dissipation. The device also offers low gate voltage requirements, low gate charge, and high breakdown voltage for superior robustness and reliability.The major application field of the RJK0391DPA-00#J5A transistor is power switching applications, such as DC motors, DC-DC converters, DC-AC inverters, and other high-current, high-speed switching applications. It can also be used in automotive, industrial, and consumer applications. The high on-state resistance and low gate charge of the device make it ideal for applications requiring high efficiency switching, such as SMPS and DC-DC converters.This device is designed to switch power by using its gate terminal to control the on-state current flow. When a positive voltage is applied to the gate terminal of the transistor, it turns the device on and current can flow through the drain to source path. When the voltage on the gate terminal is pulled low, the device turns off and the flow of current stops.The drain-source breakdown voltage is another important feature of the RJK0391DPA-00#J5A transistor. It is the voltage at which the device stops conducting current, which is important for applications that require a higher voltage level for switching. Also, the drain-source on-resistance of the device is very low. This is key for applications that require a low voltage drop across the switch to minimize power dissipation.In summary, the RJK0391DPA-00#J5A is an N-Channel Enhanced Power MOSFET for high current, high speed switching applications. It offers a low gate charge and on-state resistance, as well as high breakdown voltage and surge current capabilities. With these features, it is an ideal choice for many switching applications, including DC-DC converters, DC-AC inverters, and other high-current, high-speed switching applications.

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