RN1963FE(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN1963FE(TE85LF)TR-ND

Manufacturer Part#:

RN1963FE(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.1W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1963FE(TE85L,F) datasheetRN1963FE(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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N1963FE(TE85L,F) are two transistors arrays of the type Bipolar Junction Transistors (BJT), which are Pre-Biased. These transistors are stable in terms of their electrical characteristics and are the best for signal switches in low and high current applications. Generally, the power is distributed among the two transistors in this array, although this can be changed by controlling the bias voltage supplied to the transistors. This array is commonly used in microelectronic circuit applications, such as audio amplifiers, voltage-driven preamplifiers, and motor drivers.

The N1963FE(TE85L,F) is composed of two emitter-coupled NPN transistors, which are connected in an emitter-follower configuration. The two transistors are arranged in parallel and the emitter-followers are pre-biased. Both the transistors together act as one output. The common emitter is the output current path and the emitter to emitter voltage is the input voltage. Both transistors have the same biasing current and a current-sharing resistor is placed between the two bases.

The N1963FE(TE85L,F) is mainly used in audio amplifiers and can provide an excellent input of low and high current applications. The typical power gain of the device is between 75 and 80 dB. In addition, this array provides an amplified output with up to 100 kHz. With the built-in current-sharing resistor, the array can reduce power consumption by reducing the peak current flowing through it.

The working principle of the N1963FE(TE85L,F) is based on the properties of its transistors. As the transistors are connected in emitter-follower configuration, when the input voltage changes, the output voltage will follow the same direction. This phenomenon is known as current mirroring. The transistors are biassed in such a way that they divide the incoming power among them. The transistors also share the incoming current, which ensures that the current consumption of the array remains low.

The N1963FE(TE85L,F) also has a few drawbacks. It has a limited voltage supply and can only operate up to 12V. Also, its output is highly dependent on the input voltage and cannot handle large input voltage variations. Despite these limitations, it is ideal for audio applications.

Overall, N1963FE(TE85L,F) is a pre-biased array of transistors which is commonly used in low and high current applications, such as audio amplifiers. This transistor array provides an excellent input current and high amplification up to 100kHz. Its current-sharing resistor helps reduce power consumption and the emitter-follower configuration provides current mirroring. Despite a few drawbacks, N1963FE(TE85L,F) remains one of the best transistor arrays for its purpose.

The specific data is subject to PDF, and the above content is for reference

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