Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	ES6

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Introduction

RN1908FE(TE85L,F) is a bipolar NPN / PNP array of eight pre-biased transistors building an insulated-gate field-effect array. These devices enable a higher integration level, a higher speed, a better circuit efficiency and a higher reliability in various devices and applications. This array is used as a low-level driver and as a low-level voltage controlled current sources in variety of consumer electronics, networking and data acquisition devices.

Array Characteristics

RN1908FE(TE85L,F) is an 8-transistor array, which contains 4 PNP and 4 NPN transistors. The drain-gate isolation of these devices results in outstanding static and dynamic characteristics. This array is suitable for operation in temperatures ranging from -45°C to +125°C.

Application Field of RN1908FE(TE85L,F)

RN1908FE(TE85L,F) is used in motor control systems, TV receivers, audio signal processing, cellular phones, and PCMCIA cards. Additionally, its integrated high speed biasing capability allows for low power consumption in applications such as programmable logic controllers, switching power supply units and power amplifiers.

Working Principle of RN1908FE(TE85L,F)

In a basic NPN configuration, a voltage applied to Vgs will cause the drain-source current to increase. When the drain-source current reaches a certain level, known as the ‘saturation region’, further increases in drain current can be reached by increasing Vgs to the ‘transition point’. In the RN1908FE(TE85L,F) array however, the drain-gate isolation gives rise to the four distinct regions of operation, which allow the device to be used as low-level current switches. When the differences between drain, gate, and source voltages overcome the stiction voltage, the transistor can be operated from a low voltage, such as 5V. This low-voltage control allows for higher speed of operation, better noise immunity and lower current consumption.

Conclusion

In conclusion, the RN1908FE(TE85L,F) array is an 8-transistor array that is used for a variety of consumer electronics, networking, and data acquisition devices. It utilizes an insulated-gate field-effect array and four different operation regions to enable higher speed, better circuit efficiency, higher reliability, and lower power consumption.

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